Document
Advanced Power Electronics Corp.
AP9977GM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free
D2 D2 D1 D1
SO-8
G2 S2
G1 S1
BVDSS RDS(ON) ID
Description
AP9977 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
G1
D1
G2 S1
60V 100mΩ
3.3A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
60 +25 3.3 2.7 20
2 -55 to 150 -55 to 150
V V A A A W ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 62.5
Unit ℃/W
1 201408294
AP9977GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=3A
VGS=4.5V, ID=2A
VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=48V, VGS=0V VGS=+25V, VDS=0V ID=3A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=25V
.f=1.0MHz
f=1.0MHz
60 - - V - - 100 mΩ
- - 125 mΩ
1 - 3V -6-S - - 25 uA - - +100 nA - 6 10 nC - 2 - nC - 3 - nC - 6 - ns - 5 - ns - 16 - ns - 3 - ns - 510 810 pF - 55 - pF - 35 - pF - 1.3 - Ω
Source-Drain Diode
Symbol VSD trr
Parameter Forward On Voltage2 Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V IS=4A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units - - 1.2 V - 27 54 ns - 32 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP9977GM-HF
ID , Drain Current (A)
RDS(ON) (mΩ)
25
T A = 25 o C
20
15
10V 7.0 V 5.0V 4.5V
10
V G =3.0V
5
0 02468
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID , Drain Current (A)
25
T A = 150 o C
20
15
10V 7.0V 5.0V
4.5V
10
V G =3.0V
5
0 0246
V DS , Drain-to-Source Voltage (V)
8
Fig 2. Typical Output Characteristics
100
ID=2A T A =25 ℃
90
.
80
70 2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
Normalized RDS(ON)
2.0
ID=3A 1.8 V G =10V
1.6
1.4
1.2
1.0
0.8
0.6 -50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.8
150
3
2
T j =150 o C
1
T j =25 o C
Normalized VGS(th)
1.5 1.2 0.9 0.6
0 0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
1.2
0.3 -50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
IS(A)
AP9977GM-HF
VGS , Gate to Source Voltage (V)
12
ID=3A
10
V DS = 30 V 8 V DS = 38 V
V DS = 48 V
6
4
2
0 0 5 10
Q G , Total Gate Charge (nC)
15
Fig 7. Gate Charge Characteristics
C (pF)
f=1.0MHz
1000
C iss
100
C oss C rss
10 1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
ID (A)
100
10
100us 1ms
1
10ms
100ms
0.1
T A =25 o C Single Pulse
0.01 0.1
1
10
1s
DC
100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
Normalized Thermal Response (Rthja)
0.2
0.1 0.1
0.05
. 0.02 0.01 0.01 Single Pulse
PDM
t
T
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135℃/W
0.001 0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective T.