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AP9977GM-HF Dataheets PDF



Part Number AP9977GM-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9977GM-HF DatasheetAP9977GM-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP9977GM-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID Description AP9977 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use.

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Advanced Power Electronics Corp. AP9977GM-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID Description AP9977 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G1 D1 G2 S1 60V 100mΩ 3.3A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol .Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 60 +25 3.3 2.7 20 2 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201408294 AP9977GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=10V, ID=3A VGS=4.5V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=48V, VGS=0V VGS=+25V, VDS=0V ID=3A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=25V .f=1.0MHz f=1.0MHz 60 - - V - - 100 mΩ - - 125 mΩ 1 - 3V -6-S - - 25 uA - - +100 nA - 6 10 nC - 2 - nC - 3 - nC - 6 - ns - 5 - ns - 16 - ns - 3 - ns - 510 810 pF - 55 - pF - 35 - pF - 1.3 - Ω Source-Drain Diode Symbol VSD trr Parameter Forward On Voltage2 Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions IS=1.7A, VGS=0V IS=4A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - 1.2 V - 27 54 ns - 32 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9977GM-HF ID , Drain Current (A) RDS(ON) (mΩ) 25 T A = 25 o C 20 15 10V 7.0 V 5.0V 4.5V 10 V G =3.0V 5 0 02468 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID , Drain Current (A) 25 T A = 150 o C 20 15 10V 7.0V 5.0V 4.5V 10 V G =3.0V 5 0 0246 V DS , Drain-to-Source Voltage (V) 8 Fig 2. Typical Output Characteristics 100 ID=2A T A =25 ℃ 90 . 80 70 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage 4 Normalized RDS(ON) 2.0 ID=3A 1.8 V G =10V 1.6 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 150 3 2 T j =150 o C 1 T j =25 o C Normalized VGS(th) 1.5 1.2 0.9 0.6 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 0.3 -50 0 50 100 T j , Junction Temperature ( o C) 150 Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 IS(A) AP9977GM-HF VGS , Gate to Source Voltage (V) 12 ID=3A 10 V DS = 30 V 8 V DS = 38 V V DS = 48 V 6 4 2 0 0 5 10 Q G , Total Gate Charge (nC) 15 Fig 7. Gate Charge Characteristics C (pF) f=1.0MHz 1000 C iss 100 C oss C rss 10 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 8. Typical Capacitance Characteristics ID (A) 100 10 100us 1ms 1 10ms 100ms 0.1 T A =25 o C Single Pulse 0.01 0.1 1 10 1s DC 100 V DS , Drain-to-Source Voltage (V) 1000 Fig 9. Maximum Safe Operating Area 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 0.2 0.1 0.1 0.05 . 0.02 0.01 0.01 Single Pulse PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135℃/W 0.001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) 100 1000 Fig 10. Effective T.


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