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AP9962AGM Dataheets PDF



Part Number AP9962AGM
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9962AGM DatasheetAP9962AGM Datasheet (PDF)

Advanced Power Electronics Corp. AP9962AGM RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package D2 D2 D1 D1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercialindustrial surface mount applications and suited for low voltage a.

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Advanced Power Electronics Corp. AP9962AGM RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package D2 D2 D1 D1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G2 S2 G1 S1 G1 BVDSS RDS(ON) ID D1 G2 S1 40V 25mΩ 7A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Rating 40 ± 20 7 5.5 20 2 0.016 -55 to 150 -55 to 150 Value 62.5 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 1 200810282 AP9962AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250uA Static Drain-Source On-Resistance2 VGS=10V, ID=7A VGS=4.5V, ID=5A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=7A Drain-Source Leakage Current VDS=40V, VGS=0V Drain-Source Leakage Current (Tj=70oC) VDS=32V ,VGS=0V Gate-Source Leakage VGS= ±20V Total Gate Charge2 ID=7A Gate-Source Charge VDS=32V Gate-Drain ("Miller") Charge VGS=4.5V Turn-on Delay Time2 VDS=20V Rise Time ID=1A Turn-off Delay Time RG=3.3Ω,VGS=10V Fall Time RD=20Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V VDS=25V f=1.0MHz 40 - - V - - 25 mΩ - - 40 mΩ 1 - 3V - 18 - S - - 1 uA - - 25 uA - - ±100 nA - 12 30 nC - 2.5 - nC - 7.4 - nC - 8 - ns - 6 - ns - 23 - ns - 5.5 - ns - 820 1350 pF - 95 - pF - 90 - pF Source-Drain Diode Symbol Parameter VSD Forward On Voltage2 trr Reverse Recovery Time2 Qrr Reverse Recovery Charge Test Conditions IS=1.7A, VGS=0V Is=7A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - 1.2 V - 19 - ns - 12 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 IS(A) RDS(ON) (mΩ) ID , Drain Current (A) 30 T A =25 o C 10V 7.0V 5.0V 4.5V 20 10 V G =3.0V 0 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 30 ID=7A T A =25 o C 26 22 18 14 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage 10 8 T j =150 o C T j =25 o C 6 4 2 0 0 0.4 0.8 1.2 1.6 V SD ,Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode VGS (th) Normalized RDS(ON) ID , Drain Current (A) AP9962AGM 30 T A =150 o C 10V 7.0V 5.0V 4.5V 20 10 V G =3.0V 0 01234 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 1.8 I D =7A 1.6 V G =10V 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.4 150 2 1.6 1.2 0.8 -50 0 50 100 Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 3 VGS , Gate to Source Voltage (V) AP9962AGM 14 I D =7A 12 10 V DS =20V V DS =24V 8 V DS =32V 6 4 2 0 0 5 10 15 20 25 30 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics C (pF) f=1.0MHz 10000 1000 C iss C100 oss C rss 10 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 8. Typical Capacitance Characteristics ID (A) 100 10 100us 1 1ms 10ms 0.1 0.01 0.1 T A =25 o C Single Pulse 1 100ms 1s DC 10 100 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 1 DUTY=0.5 Normalized Thermal Response (Rthja) 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135℃/W 0.01 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) 10 100 1000 Fig 10. Effective Transient Thermal Impedance ID , Drain Current (A) 40 V DS =5V 30 20 T j =25 o C T j =150 o C VG 4.5V QGS QG.


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