Document
Advanced Power Electronics Corp.
AP9962AGM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package
D2
D2 D1 D1
SO-8
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G2 S2 G1 S1
G1
BVDSS RDS(ON) ID
D1 G2
S1
40V 25mΩ
7A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS
ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating 40 ± 20 7 5.5 20 2
0.016 -55 to 150 -55 to 150
Value 62.5
Units V V A A A W
W/℃ ℃ ℃
Unit ℃/W
Data and specifications subject to change without notice
1 200810282
AP9962AGM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=7A
Drain-Source Leakage Current
VDS=40V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=32V ,VGS=0V
Gate-Source Leakage
VGS= ±20V
Total Gate Charge2
ID=7A
Gate-Source Charge
VDS=32V
Gate-Drain ("Miller") Charge
VGS=4.5V
Turn-on Delay Time2
VDS=20V
Rise Time
ID=1A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=20Ω
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VGS=0V VDS=25V f=1.0MHz
40 - - V
- - 25 mΩ
- - 40 mΩ
1 - 3V
- 18 -
S
- - 1 uA
- - 25 uA - - ±100 nA - 12 30 nC - 2.5 - nC - 7.4 - nC - 8 - ns - 6 - ns - 23 - ns - 5.5 - ns
- 820 1350 pF - 95 - pF - 90 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
Is=7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units - - 1.2 V - 19 - ns - 12 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
IS(A)
RDS(ON) (mΩ)
ID , Drain Current (A)
30
T A =25 o C
10V 7.0V
5.0V
4.5V
20
10
V G =3.0V
0 0 0.5 1 1.5 2 2.5 3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
30
ID=7A T A =25 o C
26
22
18
14 2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
T j =150 o C
T j =25 o C
6
4
2
0 0 0.4 0.8 1.2 1.6
V SD ,Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
VGS (th)
Normalized RDS(ON)
ID , Drain Current (A)
AP9962AGM
30
T A =150 o C
10V
7.0V
5.0V
4.5V
20
10
V G =3.0V
0 01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D =7A 1.6 V G =10V
1.4
1.2
1.0
0.8
0.6 -50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.4
150
2
1.6
1.2
0.8 -50
0
50 100
Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
150
3
VGS , Gate to Source Voltage (V)
AP9962AGM
14
I D =7A
12
10 V DS =20V V DS =24V
8 V DS =32V
6
4
2
0 0 5 10 15 20 25 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
C (pF)
f=1.0MHz
10000
1000
C iss
C100 oss C rss
10 1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
ID (A)
100
10
100us
1 1ms 10ms
0.1
0.01 0.1
T A =25 o C Single Pulse
1
100ms 1s
DC
10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1 DUTY=0.5
Normalized Thermal Response (Rthja)
0.2
0.1 0.1
0.05
0.02 0.01
Single Pulse
PDM t T
Duty factor = t/T Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
0.01 0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
ID , Drain Current (A)
40
V DS =5V
30
20
T j =25 o C T j =150 o C
VG
4.5V QGS
QG.