DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP9938AGEY-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Cap...
Description
Advanced Power Electronics Corp.
AP9938AGEY-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 2.5V Gate Drive ▼ Low On-resistance ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free
D1/D2 2928-8
G2
S2 G1 S1
Description
AP9938A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6.
BVDSS RDS(ON) ID
D1 G1 G2
S1
20V 16mΩ 7.5A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.5V3 Pulsed Drain Current1
20 V +12 V 7.5 A
6A 40 A
PD@TA=25℃ TSTG TJ
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
1.38 -55 to 150 -55 to 150
W ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 90
Unit ℃/W
1 201412182
AP9938AGEY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
VGS(th)
Gate...
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