APA2N70K-HF

Advanced Power Electronics Corp. APA2N70K-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ Halogen Free & RoHS Compliant Product D SOT-223 S D G BVDSS RDS(ON) ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 package. G 600V 10Ω 0.35A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ IDM PD@TA=25℃ EAS IAR TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V4 Pulsed Drain Current1 Total Power Dissipation Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range 600 +30 0.35 1.4 2.7 0.5 1 -55 to 150 -55 to 150 V V A A W mJ A ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient4 Data & specifications subject to change without notice Value 45 Unit ℃/W 1 201501134 APA2N70K-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=1mA Static Drain-Source On-Resistance3 VGS=10V, ID=0.35A Gate Threshold Voltage ...