AP80SL400AS

Advanced Power Electronics Corp. AP80SL400AS Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic D ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S Description AP80SL400A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. VDS @ Tj,max. RDS(ON) ID 850V 0.4Ω 12A GD S TO-263(S) Absolute Maximum Ratings . Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation Total Power Dissipation4 Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 Storage Temperature Range Operating Junction Temperature Range Rating 800 +20 12 7.6 30 50 152 3.12 108 15 -55 to 150 -55 to 150 Units V V A A A V/ns W W mJ V/ns ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Value 0.82 40 ...