Document
Features
• Ultra Low Forward Voltage Drop • Superior Reverse Avalanche Capability • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability • 150ºC Operating Junction Temperature • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)
SBR3U100LP
3A SBR® SUPER BARRIER RECTIFER
Mechanical Data
• Case: U-DFN3030-8 • Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – NiPdAu annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208 e4 • Weight: 0.0172 grams (approximate)
U-DFN3030-8 Bottom View
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C = CATHODE A = ANODE
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Top View Schematic and Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number SBR3U100LP-7
Case U-DFN3030-8
Packaging 3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
3U10
3U10 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 06 for 2006) WW = Week code (01 ~ 53)
SBR is a registered trademark of Diodes Incorporated.
SBR3U100LP
Document number: DS30998 Rev. 8 - 2
1 of 5 www.diodes.com
October 2012
© Diodes Incorporated
SBR3U100LP
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
Symbol VRRM VRWM VRM
VR(RMS) IO
IFSM
Value
100
70 3.0 32
Unit
V
V A A
Thermal Characteristics
Characteristic Maximum Thermal Resistance Junction to Ambient (Note 5) TA = +25ºC Operating and Storage Temperature Range
Symbol
RθJA TJ, TSTG
Value 61
-65 to +150
Unit °C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Reverse Breakdown Voltage (Note 6)
V(BR)R
100
-
-
Forward Voltage
VF -
- 0.79
Reverse Current (Note 6)
IR
- 16 200 - 3 15
Notes:
5. Device mounted on Polyimide substrate, 2 oz. Copper, 75mm2 pad area, double side PCB. 6. Short duration pulse test used to minimize self-heating effect.
Unit V
V
µA mA
Test Condition
IR = 0.2mA IF = 3.0A, TJ = +25ºC VR = 100V, TJ = +25ºC VR = 100V, TJ = +125ºC
SBR is a registered trademark of Diodes Incorporated.
SBR3U100LP
Document number: DS30998 Rev.