DatasheetsPDF.com

FDD8896_F085 Dataheets PDF



Part Number FDD8896_F085
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET
Datasheet FDD8896_F085 DatasheetFDD8896_F085 Datasheet (PDF)

FDD8896_F085 N-Channel PowerTrench® MOSFET FDD8896_F085 N-Channel PowerTrench® MOSFET 30V, 94A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters January 2012 Features • rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A • rDS(ON) = 6.8mΩ, VGS = 4..

  FDD8896_F085   FDD8896_F085



Document
FDD8896_F085 N-Channel PowerTrench® MOSFET FDD8896_F085 N-Channel PowerTrench® MOSFET 30V, 94A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters January 2012 Features • rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A • rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability • Qualified to AEC Q101 • RoHS Compliant D G S DTO-P-2A5K2 (TO-252) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature D G S Ratings 30 ±20 94 85 17 Figure 4 168 80 0.53 -55 to 175 Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 1.88 100 52 Units V V A A A A mJ W W/oC oC oC/W oC/W oC/W ©2012 Fairchild Semiconductor Corporation FDD8896_F085 Rev. C2 1 www.fairchildsemi.com FDD8896_F085 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDD8896 Device FDD8896_F085 Package TO-252AA Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 24V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS(TH) Gate to Source Threshold Voltage rDS(ON) Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 35A, VGS = 10V ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge VDS = 15V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 35A Ig = 1.0mA Switching Characteristics (VGS = 10V) tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 15V, ID = 35A VGS = 10V, RGS = 6.2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr QRR Reverse Recovery Ti.


MM109N06K FDD8896_F085 SBA120CS


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)