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FDD8896_F085 N-Channel PowerTrench® MOSFET
FDD8896_F085
N-Channel PowerTrench® MOSFET 30V, 94A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Applications
• DC/DC converters
January 2012
Features
• rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A • rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low
rDS(ON) • Low gate charge • High power and current handling capability • Qualified to AEC Q101 • RoHS Compliant
D G
S DTO-P-2A5K2 (TO-252)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
ID
EAS PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation Derate above 25oC
TJ, TSTG Operating and Storage Temperature
D
G
S
Ratings 30 ±20
94 85 17 Figure 4 168 80 0.53 -55 to 175
Thermal Characteristics
RθJC RθJA RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
1.88 100 52
Units V V
A A A A mJ W W/oC oC
oC/W oC/W oC/W
©2012 Fairchild Semiconductor Corporation FDD8896_F085 Rev. C2
1
www.fairchildsemi.com
FDD8896_F085 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Device Marking FDD8896
Device FDD8896_F085
Package TO-252AA
Reel Size 13”
Tape Width 12mm
Quantity 2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS IDSS IGSS
Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 24V VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250μA ID = 35A, VGS = 10V ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC
Dynamic Characteristics
CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge
VDS = 15V, VGS = 0V, f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V VGS = 0V to 1V
VDD = 15V ID = 35A Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON td(ON) tr td(OFF) tf tOFF
Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
VDD = 15V, ID = 35A VGS = 10V, RGS = 6.2Ω
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr QRR
Reverse Recovery Ti.