MXP6008CT

N-Channel MOSFET Applications: ● Power Supply ● DC-DC Converters MXP6008CT Datasheet VDSS 60V RDS(ON)(MAX) 8mΩ IDa 109A Features: ● Lead Free ● Low RDS(ON) to Minimize Conductive Loss ● Low Gate Charge for Fast Switching Application ● Optimized BVDSS Capability Ordering Information Park Number Package MXP6008CT TO-220 Brand MXP Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-to-Source Voltage 60 IDa Continuous Drain Current IDM Pulsed Drain Current @VG=10V 109 436 PD Power Dissipation Derating Factor above 25℃ 150 1.00 VGS Gate-to-Source Voltage +/-20 EAS Single Pulse Avalanche Energy (L=1mH, IAS=40A) 800 IAS Pulsed Avalanche Energy Figure 9 TJ and TSTG Operating Junction and Storage Temperature Range -55 to 175 Unit V A W W/℃ V mJ A ℃ Thermal Resistance Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient Min Typ Max Unit Test Conditions Water cooled heatsink, PD 1.00 ℃/W adjusted for a peak junction Temperature of 175℃ 62 1 cubic foot chanber, free air Note: a: Calculated continuous current based upon maximum allowable junction temperature +175℃. Package limitation current is 80A. ©MaxPower Semiconductor Inc. Page1 MXP6008CT Ver 1.0 Jan. 2011 OFF Characteristics Symbol Parameter BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage TJ=25℃ unless otherwise specified Min Typ...