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MBR20H100C Dataheets PDF



Part Number MBR20H100C
Manufacturers BCD
Logo BCD
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Datasheet MBR20H100C DatasheetMBR20H100C Datasheet (PDF)

Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20H100C General Description Main Product Characteristics High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. IF(AV) VRRM TJ VF(max) 2*10A 100V 175oC 0.64V MBR20H100C is available in TO-220-3, TO-220-3(2) and TO-220F-3 packages .

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Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20H100C General Description Main Product Characteristics High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. IF(AV) VRRM TJ VF(max) 2*10A 100V 175oC 0.64V MBR20H100C is available in TO-220-3, TO-220-3(2) and TO-220F-3 packages Features · Low Forward Voltage: 0.64V @125oC · High Surge Capacity · 175oC Operating Junction Temperature · 20 A Total (10A Each Diode Leg) · Guard-Ring for Stress Protection · Pb-Free Package Applications · Power Supply Output Rectification · Power Management · Instrumentation Mechanical Characteristics · Case: Epoxy, Molded · Epoxy Meets UL 94 V-0 @ 0.125 in · Weight (Approximately): 2 Grams (TO-220-3, TO-220-3(2) and TO-220F-3) · Finish: All External Surfaces Corrosion Resistant and Terminal · Leads are Readily Solderable · Lead Temperature for Soldering Purposes: 260oC Maximum for 10 Seconds TO-220F-3 TO-220-3 TO-220-3(2) Apr. 2009 Rev. 1. 2 Figure 1. Package Type of MBR20H100C BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Pin Configuration MBR20H100C (TO-220-3) T Package (TO-220-3(2)) 3 A2 3 A2 2 K 2K 1 A1 1 A1 TF Package (TO-220F-3) 3 A2 2K 1 A1 Figure 2. Pin Configuration of MBR20H100C(front view) A1 K A2 Apr. 2009 Rev. 1. 2 Figure 3. Internal Structure of MBR20H100C BCD Semiconductor Manufacturing Limited 2 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Ordering Information Data Sheet MBR20H100C MBR20H100C Circuit Type Package T: TO-220-3/TO-220-3(2) TF: TO220F-3 - E1: Lead Free G1: Green Blank: Tube Package Part Number Lead Free Green Marking ID Lead Free Green TO-220-3/ TO-220-3(2) MBR20H100CT-E1 MBR20H100CT-G1 MBR20H100CT-E1 MBR20H100CT-G1 TO-220F-3 MBR20H100CTF-E1 MBR20H100CTF-G1 MBR20H100CTF-E1 MBR20H100CTF-G1 Packing Type Tube Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Apr. 2009 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 3 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Absolute Maximum Ratings (Each Diode Leg) (Note 1) Data Sheet MBR20H100C Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC=162oC Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC=160oC Non Repetitive Peak Surge Current (Surge applied at rated load conditions half wave, single phase, 60 Hz) Operating Junction Temperature (Note 2) Storage Temperature Range Voltage Rate of Change (Rated VR) ESD (Machine Model=C) VRRM VRWM VR IF(AV) IFRM IFSM TJ TSTG dv/dt 100 10 20 250 175 -65 to 175 10000 >400 V A A A oC oC V/µs V ESD (Human Body Model=3B) >8000 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/RθJA. Thermal Characteristics Parameter Symbol Maximum Thermal Resistance RθJC RθJA Condition Junction to Case TO-220-3/ TO-220-3(2) TO-220F-3 Junction to Ambient TO-220-3/ TO-220-3(2) Value 2.0 2.5 60 Unit oC/W Apr. 2009 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 4 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Electrical Characteristics (Each Diode Leg) Parameter Condition IF=10 A, TC=25oC Maximum Instantaneous Forward IF=10 A, TC=125oC Voltage Drop (Note 3) IF=20 A, TC=25oC IF=20 A, TC=125oC Maximum Instantaneous Reverse Rated DC Voltage, TC=125oC Current (Note 3) Rated DC Voltage, TC=25oC Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%. Symbol VF IR Data Sheet MBR20H100C Value 0.77 0.64 0.88 0.73 6.0 0.0045 Unit V mA Apr. 2009 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 5 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Typical Performance Characteristics 100 Data Sheet MBR20H100C IF, Instantaneous Forward Current (A) 10 1 0.1 25oC 125oC 150oC 175oC 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, Instantaneous Forward Voltage (V) Figure 4. Typical Forward Voltage 0.01 1E-3 1E-4 1E-5 1E-6 1E-7 1E-8 1E-9 Apr. 2009 Rev. 1. 2 IR, Reverse Current (A) 25oC 125oC 150oC 175oC 20 40 60 VR, Reverse Voltage (V) Figure 5. Typical Reverse Current 80 100 BCD Semiconductor Manufacturing Limited 6 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Typical Performance Characteristics (Continued) 10000 Data Sheet MBR20H100C 1000 TJ=25oC Capacitan.


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