Document
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100C
General Description
Main Product Characteristics
High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required.
IF(AV) VRRM
TJ VF(max)
2*10A 100V 175oC 0.64V
MBR20H100C is available in TO-220-3, TO-220-3(2) and TO-220F-3 packages
Features
· Low Forward Voltage: 0.64V @125oC · High Surge Capacity · 175oC Operating Junction Temperature · 20 A Total (10A Each Diode Leg) · Guard-Ring for Stress Protection · Pb-Free Package
Applications
· Power Supply Output Rectification · Power Management · Instrumentation
Mechanical Characteristics
· Case: Epoxy, Molded · Epoxy Meets UL 94 V-0 @ 0.125 in · Weight (Approximately):
2 Grams (TO-220-3, TO-220-3(2) and TO-220F-3) · Finish: All External Surfaces Corrosion Resistant and Terminal · Leads are Readily Solderable · Lead Temperature for Soldering Purposes: 260oC Maximum for 10 Seconds
TO-220F-3
TO-220-3
TO-220-3(2)
Apr. 2009 Rev. 1. 2
Figure 1. Package Type of MBR20H100C
BCD Semiconductor Manufacturing Limited 1
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Pin Configuration
MBR20H100C
(TO-220-3)
T Package
(TO-220-3(2))
3 A2 3 A2 2 K 2K 1 A1 1 A1
TF Package (TO-220F-3)
3 A2 2K 1 A1
Figure 2. Pin Configuration of MBR20H100C(front view)
A1 K
A2
Apr. 2009 Rev. 1. 2
Figure 3. Internal Structure of MBR20H100C
BCD Semiconductor Manufacturing Limited 2
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Ordering Information
Data Sheet MBR20H100C
MBR20H100C
Circuit Type
Package T: TO-220-3/TO-220-3(2) TF: TO220F-3
-
E1: Lead Free G1: Green
Blank: Tube
Package
Part Number
Lead Free
Green
Marking ID
Lead Free
Green
TO-220-3/ TO-220-3(2)
MBR20H100CT-E1
MBR20H100CT-G1
MBR20H100CT-E1 MBR20H100CT-G1
TO-220F-3 MBR20H100CTF-E1 MBR20H100CTF-G1 MBR20H100CTF-E1 MBR20H100CTF-G1
Packing Type
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages.
Apr. 2009 Rev. 1. 2
BCD Semiconductor Manufacturing Limited 3
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Data Sheet MBR20H100C
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current (Rated VR) TC=162oC Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC=160oC Non Repetitive Peak Surge Current (Surge applied at rated load conditions half wave, single phase, 60 Hz)
Operating Junction Temperature (Note 2)
Storage Temperature Range
Voltage Rate of Change (Rated VR)
ESD (Machine Model=C)
VRRM VRWM
VR
IF(AV)
IFRM
IFSM
TJ TSTG dv/dt
100
10
20
250 175 -65 to 175 10000 >400
V
A
A
A oC oC V/µs V
ESD (Human Body Model=3B)
>8000
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/RθJA.
Thermal Characteristics
Parameter
Symbol
Maximum Thermal Resistance
RθJC RθJA
Condition
Junction to Case
TO-220-3/ TO-220-3(2)
TO-220F-3
Junction to Ambient
TO-220-3/ TO-220-3(2)
Value 2.0 2.5 60
Unit oC/W
Apr. 2009 Rev. 1. 2
BCD Semiconductor Manufacturing Limited 4
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Electrical Characteristics (Each Diode Leg)
Parameter
Condition
IF=10 A, TC=25oC
Maximum Instantaneous Forward IF=10 A, TC=125oC
Voltage Drop (Note 3)
IF=20 A, TC=25oC
IF=20 A, TC=125oC
Maximum Instantaneous Reverse Rated DC Voltage, TC=125oC
Current (Note 3)
Rated DC Voltage, TC=25oC
Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.
Symbol VF IR
Data Sheet MBR20H100C
Value 0.77 0.64 0.88 0.73 6.0
0.0045
Unit V
mA
Apr. 2009 Rev. 1. 2
BCD Semiconductor Manufacturing Limited 5
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Typical Performance Characteristics
100
Data Sheet MBR20H100C
IF, Instantaneous Forward Current (A)
10
1
0.1 25oC 125oC 150oC 175oC
0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Voltage
0.01 1E-3 1E-4 1E-5 1E-6 1E-7 1E-8 1E-9
Apr. 2009 Rev. 1. 2
IR, Reverse Current (A)
25oC 125oC 150oC 175oC
20 40 60
VR, Reverse Voltage (V)
Figure 5. Typical Reverse Current
80
100
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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Typical Performance Characteristics (Continued)
10000
Data Sheet MBR20H100C
1000
TJ=25oC
Capacitan.