Document
DMNH6022SSDQ
60V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
27mΩ @ VGS = 10V 30mΩ @ VGS = 6V
ID TC = +25°C
22.6A
21.5A
Description and Applications
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
Engine Management Systems Body Control Electronics DC-DC Converters
SO-8
Features and Benefits
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low RDS(ON) – Minimizes Power Losses Low Qg – Minimizes Switching Losses Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)
Mechanical Data
Case: SO-8 Case Material: Molded Plastic, ―Green‖ Molding Compound;
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate)
D1 D2
Pin1 Top View
S1 D1 G1 D1 S2 D2 G2 D2
Top View Pin Configuration
G1
G2
S1
Equivalent Circuit
S2
Ordering Information (Note 5)
Notes:
Part Number
Case
Packaging
DMNH6022SSDQ-13
SO-8
2,500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
85
NH6022SD
YY WW
= Manufacturer’s Marking NH6022SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53)
14
DMNH6022SSDQ
Document number: DS38694 Rev. 4 - 2
1 of 7 www.diodes.com
August 2016
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current VGS = 10V (Note 7)
Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 7) Avalanche Current L = 0.1mL (Note 8) Avalanche Energy L = 0.1mL (Note 8)
TC = +25°C TC = +100°C TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
ID
IDM IS IAS EAS
DMNH6022SSDQ
Value 60 ±20
22.6 16.0
7.1 5.9
45 2 22 24
Unit V V
A
A
A A A mJ
Thermal Characteristics
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range
TA = +25°C Steady State
t<10s
TA = +25°C Steady State
t<10s
Symbol PD
RθJA
PD RθJA
RθJC TJ, TSTG
Value 1.5 104 60 2.1 74 42 7.25
-55 to +175
Unit W °C/W W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at (VGS = 10V) Total Gate Charge at (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Symbol
BVDSS IDSS IGSS
VGS(TH)
RDS(ON)
VSD
Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON)
tR tD(OFF)
tF tRR QRR
Min
60 — —
1.0
—
—
— — — — — — — — — — — — — —
Typ
— — —
— 21 24 0.8
2127 86 54 2.0 32 14 7 4 5.4 4.4 30.4 8.4 18.1 12.5
Max
— 1 ±100
3.0 27 30 1.2
— — — — — — — — — — — — — —
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing.
Unit
V µA nA
V
mΩ
V
pF pF pF Ω nC nC nC nC ns ns ns ns ns nC
Test Condition
VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA VGS = 10V, ID = 5A VGS = 6V, ID = 5A VGS = 0V, IS = 1.7A
VDS = 25V, VGS = 0V, .