DatasheetsPDF.com

DMNH6022SSDQ Dataheets PDF



Part Number DMNH6022SSDQ
Manufacturers Diodes
Logo Diodes
Description DUAL N-CHANNEL MOSFET
Datasheet DMNH6022SSDQ DatasheetDMNH6022SSDQ Datasheet (PDF)

DMNH6022SSDQ 60V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 27mΩ @ VGS = 10V 30mΩ @ VGS = 6V ID TC = +25°C 22.6A 21.5A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Engine Management Systems  Body Control Electronics  DC-DC Converters SO-8 Features and Benefits  Rated to +175°C – Ideal for High Ambient.

  DMNH6022SSDQ   DMNH6022SSDQ


Document
DMNH6022SSDQ 60V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 27mΩ @ VGS = 10V 30mΩ @ VGS = 6V ID TC = +25°C 22.6A 21.5A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Engine Management Systems  Body Control Electronics  DC-DC Converters SO-8 Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes Power Losses  Low Qg – Minimizes Switching Losses  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: SO-8  Case Material: Molded Plastic, ―Green‖ Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208  Weight: 0.074 grams (Approximate) D1 D2 Pin1 Top View S1 D1 G1 D1 S2 D2 G2 D2 Top View Pin Configuration G1 G2 S1 Equivalent Circuit S2 Ordering Information (Note 5) Notes: Part Number Case Packaging DMNH6022SSDQ-13 SO-8 2,500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SO-8 85 NH6022SD YY WW = Manufacturer’s Marking NH6022SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) 14 DMNH6022SSDQ Document number: DS38694 Rev. 4 - 2 1 of 7 www.diodes.com August 2016 © Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current VGS = 10V (Note 7) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 7) Avalanche Current L = 0.1mL (Note 8) Avalanche Energy L = 0.1mL (Note 8) TC = +25°C TC = +100°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID IDM IS IAS EAS DMNH6022SSDQ Value 60 ±20 22.6 16.0 7.1 5.9 45 2 22 24 Unit V V A A A A A mJ Thermal Characteristics Total Power Dissipation (Note 6) Characteristic Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range TA = +25°C Steady State t<10s TA = +25°C Steady State t<10s Symbol PD RθJA PD RθJA RθJC TJ, TSTG Value 1.5 104 60 2.1 74 42 7.25 -55 to +175 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at (VGS = 10V) Total Gate Charge at (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol BVDSS IDSS IGSS VGS(TH) RDS(ON) VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR Min 60 — — 1.0 — — — — — — — — — — — — — — — — Typ — — — — 21 24 0.8 2127 86 54 2.0 32 14 7 4 5.4 4.4 30.4 8.4 18.1 12.5 Max — 1 ±100 3.0 27 30 1.2 — — — — — — — — — — — — — — Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. Unit V µA nA V mΩ V pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Test Condition VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 5A VGS = 6V, ID = 5A VGS = 0V, IS = 1.7A VDS = 25V, VGS = 0V, .


DMNH6022SSD DMNH6022SSDQ DMNH6042SK3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)