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TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Applications
Small-Cell Basestations Enterprise Femtocell Bands 5, 6, 8, 12, 13, 14, 17, 20, 26, 27, 28, 29
Product Features
Frequency Range : 0.7-1.0 GHz Covers multiple bands with one component Fully integrated, 2-stage Power Amplifier Internally matched 50 Ω input/output -50dBc ACLR (corrected) @ +28 dBm Pavg 32 dB Gain 27% PAE @ +28 dBm Pavg In-built Control Bias and Temp. Comp Circuit Single Supply Voltage : 5V Lead-free / RoHS compliant POE Capable
3.5x4.5 mm Leadless SMT Package
Functional Block Diagram
RFin VPD1 VPD2 N/C N/C 13 12 11 10 9
N/C RFout 87
AMP1
Matching Network
AMP2
Matching Network
Pin 1 Reference Mark Package Topside
12
VBIAS VCC
3 N/C
4 N/C
5 N/C
6 N/C
Exposed Backside Pad
GND
General Description
The TQP9309 is a high-efficiency two-stage power amplifier in a low-cost surface-mount package with onchip bias control and temperature compensation circuitry, suitable for small cell base station applications.
TQP9309 provides 32 dB gain and >+28 dBm linear power with pre-distortion correction over the 0.7-1.0 GHz frequency range for Bands 5, 6, 8, 12, 13, 14, 17, 20, 26, 27, 28, and 29. With pre-distortion, the amplifier is able to achieve -50dBc ACLR at 28 dBm output power using a 20 MHz LTE signal.
The TQP9309 integrates two high performance amplifier stages onto a module to allow for a compact system design and requires very few external components for operation. The amplifier is bias adjustable allowing the amplifier’s power consumption to be optimized. The TQP9309 is available in a lead-free/RoHS-compliant 3.5x4.5mm surface mount package and is pincompatible to the 1.8-2.2 GHz TQP9321 and 2.5-2.7 GHz TQP9326.
Pin Configuration
Pin No.
1 2 3, 4, 5, 6, 8, 9, 10 7 11 12 13 Backside Paddle
Label
Vbias Vcc GND or NC RFout Vpd2 Vpd1 RFin RF/DC Ground
Ordering Information
Part No.
Description
TQP9309
0.7-1.0 GHz Power Amplifier
TQP9309-PCB
Evaluation board
Standard T/R size: 2500 pcs. on a 13” reel
Datasheet: Rev E 03-25-16 © 2016 TriQuint Semiconductor, Inc
- 1 of 9 -
Disclaimer: Subject to change
www.triquint.com / www.qorvo.com
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
−40 to 150°C
Supply Voltage (VCC) RF Input Power, CW, 50Ω, T=25°C
6V 10dBm
Operation of this device outside the parameter ranges given above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min Typ Max Units
VDD TAMB Tj for >106 hours MTTF
5V −40 25 +85 °C
+190 °C
Notes: 1. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VCC =+5V, Vpd = +5V, Temp= +25°C, Test Frequency : 900MHz
Parameter
Conditions
Min Typ Max
Operational Frequency Range
700 960
Output Channel Power
+28
Gain
700 - 800MHz 800 - 960MHz
28.6 31 29.6 32 33.3
Gain Temperature Coefficient
-0.026
ACLR Uncorrected
See note 1
-37
ACLR Corrected
See note 1
-50
Power Added Efficiency
See note 1
27
Noise Figure
4
Output P3dB
+33.9
+35
P3dB Temperature Coefficient
-0.005
Supply Voltage
5
Quiescent Current, ICQ Operational Current, Icc
VSWR Survivability
Pout = +26 dBm Signal : WCDMA 1C, PAR = 8 dB
85 100 127 380
7:1
Thermal Resistance, θjc
Module (junction to case)
28.3
Notes: 1. Using LTE signal, 20MHz, IBW = 18.02 MHz, PAR 7.5dB, Pout = +28 dBm 2. Items in min/max columns in bold at guaranteed by production test at 900 MHz 3. Items in min/max columns that are not a bold font are guaranteed by design characterization.
Units
MHz dBm dB dB dB/°C dBc dBc
% dB dBm dBm/°C V mA mA
–
°C/W
Datasheet: Rev E 03-25-16 © 2016 TriQuint Semiconductor, Inc
- 2 of 9 -
Disclaimer: Subject to change
www.triquint.com / www.qorvo.com
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Performance Plots
Gain (dB)
Gain vs. Output Power vs. Frequency
36
34 Temp.=+25°C
32
30
28
26
24
720 MHz
770 MHz
820 MHz
850 MHz
22
20
18
16 20 22 24 26 28 30 32 34 36
Pout (dBm)
Efficiency vs. Output Power vs. Frequency
55 50 Temp.=+25°C 45
CW 40
35
30 25 700 MHz
770 MHz 20 820 MHz 15 850 MHz 10 900 MHz
5 960 MHz
0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Pout (dBm)
Efficiency (%)
Efficiency (%)
Gain (dB)
Gain vs. Output Power vs. Temperature
38
36 34 F = 900 MHz
Temp.=+25°C
32
30
28 +85°C
26 +25°C −40°C
24
22
20
18 20 22 24 26 28 30 32 34 36
Pout (dBm)
Efficiency vs. Output Power vs. Temperature
60
55 Temp.=+25°C 50
45 F = 900 MHz CW
40
35
30
25
20 +85°C
15 +25°C 10 −40°C
5
0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Pout (dBm)
Datasheet: Rev E 03-25-16 © 2016 TriQuint Semiconductor, Inc
- 3 of 9 -
Disclaimer: Subject to change
www.triquint.com / www.qorvo.com
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Performance .