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TQP9309 Dataheets PDF



Part Number TQP9309
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description High Efficiency 0.5W Small Cell Power Amplifier
Datasheet TQP9309 DatasheetTQP9309 Datasheet (PDF)

TQP9309 High Efficiency 0.5W Small Cell Power Amplifier Applications  Small-Cell Basestations  Enterprise Femtocell  Bands 5, 6, 8, 12, 13, 14, 17, 20, 26, 27, 28, 29 Product Features  Frequency Range : 0.7-1.0 GHz  Covers multiple bands with one component  Fully integrated, 2-stage Power Amplifier  Internally matched 50 Ω input/output  -50dBc ACLR (corrected) @ +28 dBm Pavg  32 dB Gain  27% PAE @ +28 dBm Pavg  In-built Control Bias and Temp. Comp Circuit  Single Supply Voltage : 5V.

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TQP9309 High Efficiency 0.5W Small Cell Power Amplifier Applications  Small-Cell Basestations  Enterprise Femtocell  Bands 5, 6, 8, 12, 13, 14, 17, 20, 26, 27, 28, 29 Product Features  Frequency Range : 0.7-1.0 GHz  Covers multiple bands with one component  Fully integrated, 2-stage Power Amplifier  Internally matched 50 Ω input/output  -50dBc ACLR (corrected) @ +28 dBm Pavg  32 dB Gain  27% PAE @ +28 dBm Pavg  In-built Control Bias and Temp. Comp Circuit  Single Supply Voltage : 5V  Lead-free / RoHS compliant  POE Capable 3.5x4.5 mm Leadless SMT Package Functional Block Diagram RFin VPD1 VPD2 N/C N/C 13 12 11 10 9 N/C RFout 87 AMP1 Matching Network AMP2 Matching Network Pin 1 Reference Mark Package Topside 12 VBIAS VCC 3 N/C 4 N/C 5 N/C 6 N/C Exposed Backside Pad GND General Description The TQP9309 is a high-efficiency two-stage power amplifier in a low-cost surface-mount package with onchip bias control and temperature compensation circuitry, suitable for small cell base station applications. TQP9309 provides 32 dB gain and >+28 dBm linear power with pre-distortion correction over the 0.7-1.0 GHz frequency range for Bands 5, 6, 8, 12, 13, 14, 17, 20, 26, 27, 28, and 29. With pre-distortion, the amplifier is able to achieve -50dBc ACLR at 28 dBm output power using a 20 MHz LTE signal. The TQP9309 integrates two high performance amplifier stages onto a module to allow for a compact system design and requires very few external components for operation. The amplifier is bias adjustable allowing the amplifier’s power consumption to be optimized. The TQP9309 is available in a lead-free/RoHS-compliant 3.5x4.5mm surface mount package and is pincompatible to the 1.8-2.2 GHz TQP9321 and 2.5-2.7 GHz TQP9326. Pin Configuration Pin No. 1 2 3, 4, 5, 6, 8, 9, 10 7 11 12 13 Backside Paddle Label Vbias Vcc GND or NC RFout Vpd2 Vpd1 RFin RF/DC Ground Ordering Information Part No. Description TQP9309 0.7-1.0 GHz Power Amplifier TQP9309-PCB Evaluation board Standard T/R size: 2500 pcs. on a 13” reel Datasheet: Rev E 03-25-16 © 2016 TriQuint Semiconductor, Inc - 1 of 9 - Disclaimer: Subject to change www.triquint.com / www.qorvo.com TQP9309 High Efficiency 0.5W Small Cell Power Amplifier Absolute Maximum Ratings Parameter Rating Storage Temperature −40 to 150°C Supply Voltage (VCC) RF Input Power, CW, 50Ω, T=25°C 6V 10dBm Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units VDD TAMB Tj for >106 hours MTTF 5V −40 25 +85 °C +190 °C Notes: 1. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: VCC =+5V, Vpd = +5V, Temp= +25°C, Test Frequency : 900MHz Parameter Conditions Min Typ Max Operational Frequency Range 700 960 Output Channel Power +28 Gain 700 - 800MHz 800 - 960MHz 28.6 31 29.6 32 33.3 Gain Temperature Coefficient -0.026 ACLR Uncorrected See note 1 -37 ACLR Corrected See note 1 -50 Power Added Efficiency See note 1 27 Noise Figure 4 Output P3dB +33.9 +35 P3dB Temperature Coefficient -0.005 Supply Voltage 5 Quiescent Current, ICQ Operational Current, Icc VSWR Survivability Pout = +26 dBm Signal : WCDMA 1C, PAR = 8 dB 85 100 127 380 7:1 Thermal Resistance, θjc Module (junction to case) 28.3 Notes: 1. Using LTE signal, 20MHz, IBW = 18.02 MHz, PAR 7.5dB, Pout = +28 dBm 2. Items in min/max columns in bold at guaranteed by production test at 900 MHz 3. Items in min/max columns that are not a bold font are guaranteed by design characterization. Units MHz dBm dB dB dB/°C dBc dBc % dB dBm dBm/°C V mA mA – °C/W Datasheet: Rev E 03-25-16 © 2016 TriQuint Semiconductor, Inc - 2 of 9 - Disclaimer: Subject to change www.triquint.com / www.qorvo.com TQP9309 High Efficiency 0.5W Small Cell Power Amplifier Performance Plots Gain (dB) Gain vs. Output Power vs. Frequency 36 34 Temp.=+25°C 32 30 28 26 24 720 MHz 770 MHz 820 MHz 850 MHz 22 20 18 16 20 22 24 26 28 30 32 34 36 Pout (dBm) Efficiency vs. Output Power vs. Frequency 55 50 Temp.=+25°C 45 CW 40 35 30 25 700 MHz 770 MHz 20 820 MHz 15 850 MHz 10 900 MHz 5 960 MHz 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Pout (dBm) Efficiency (%) Efficiency (%) Gain (dB) Gain vs. Output Power vs. Temperature 38 36 34 F = 900 MHz Temp.=+25°C 32 30 28 +85°C 26 +25°C −40°C 24 22 20 18 20 22 24 26 28 30 32 34 36 Pout (dBm) Efficiency vs. Output Power vs. Temperature 60 55 Temp.=+25°C 50 45 F = 900 MHz CW 40 35 30 25 20 +85°C 15 +25°C 10 −40°C 5 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Pout (dBm) Datasheet: Rev E 03-25-16 © 2016 TriQuint Semiconductor, Inc - 3 of 9 - Disclaimer: Subject to change www.triquint.com / www.qorvo.com TQP9309 High Efficiency 0.5W Small Cell Power Amplifier Performance .


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