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TGA2239 Dataheets PDF



Part Number TGA2239
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description 35W GaN Power Amplifier
Datasheet TGA2239 DatasheetTGA2239 Datasheet (PDF)

Applications  Satellite Communications  Data Link  Radar TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier Product Features  Frequency Range: 13 – 15.5 GHz  PSAT: >45.5 dBm @ PIN = 21 dBm  PAE: >32% @ PIN = 21 dBm  Large Signal Gain: >24.5 dB  Small Signal Gain: 29.5 dB  Bias: VD = 22 V, IDQ = 900 mA, VG = -2.7 V Typical  Process Technology GaN-TQGaN15  Chip Dimensions: 5.00 x 6.65 x 0.10 mm  Performance Under CW Operation Functional Block Diagram 23 4 5 1 10 9 8 7 6 General.

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Applications  Satellite Communications  Data Link  Radar TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier Product Features  Frequency Range: 13 – 15.5 GHz  PSAT: >45.5 dBm @ PIN = 21 dBm  PAE: >32% @ PIN = 21 dBm  Large Signal Gain: >24.5 dB  Small Signal Gain: 29.5 dB  Bias: VD = 22 V, IDQ = 900 mA, VG = -2.7 V Typical  Process Technology GaN-TQGaN15  Chip Dimensions: 5.00 x 6.65 x 0.10 mm  Performance Under CW Operation Functional Block Diagram 23 4 5 1 10 9 8 7 6 General Description TriQuint’s TGA2239 is a Ku-band, high power MMIC amplifier fabricated on TriQuint’s production 0.15um GaN on SiC process. The TGA2239 operates from 13 – 15.5 GHz and provides a superior combination of power, gain and efficiency by achieving greater than 35 W of saturated output power with 24.5dB of large signal gain and greater than 32% power-added efficiency. This superior performance provides system designers the flexibility to improve system performance while reducing size and cost. The TGA2239 is fully matched to 50 Ohms with integrated DC blocking capacitors on RF ports simplifying system integration. It is ideally suited for military and commercial Ku-band radar and satellite communication systems. Lead-free and RoHS compliant. Evaluation boards are available upon request. Pad Configuration Pad No. 1 2, 10 3, 9 4, 8 5, 7 6 Symbol RF In VG1-2 VG3 VD1-2 VD3 RF Out Ordering Information Part TGA2239 ECCN Description 3A001.b.2.b 13 – 15.5 GHz 35W GaN Power Amplifier Preliminary Datasheet: Rev - 12-12-14 © 2014 TriQuint - 1 of 15 - Disclaimer: Subject to change without notice www.triquint.com TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier Absolute Maximum Ratings Parameter Value Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID1-2) Drain Current (ID3) Gate Current (IG1-2) @ TCH = 200°C Gate Current (IG3) @ TCH = 200°C Power Dissipation (PDISS), 85°C, CW Input Power (PIN), CW, 50Ω, VD = 22 V, IDQ = 900 mA, 85°C 23 V -5 to -0 V 2.8 A 4.3 A -5 to 14.5 mA -12.5 to 38 mA 117 W 33 dBm Input Power (PIN), CW, VSWR 3:1, VD = 22 V, IDQ = 900 mA, 85°C 30 dBm Channel Temperature (TCH) Mounting Temperature (30 seconds) 275°C 320°C Storage Temperature -55 to 150°C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage (VD) 22 V Drain Current (IDQ) 900 mA (Total) Gate Voltage (VG) -2.7 V (Typ.) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: 25°C , VD = 22 V, IDQ = 900 mA, VG = -2.7 V Typical, CW Parameter Min Typical Operational Frequency Range 13 Small Signal Gain 29.5 Input Return Loss >13 Output Return Loss >7.5 Power Gain (Pin = 21dBm) >24.5 Output Power (Pin = 21dBm) >45.5 Power Added Efficiency (Pin = 21dBm) >32 Small Signal Gain Temperature Coefficient -0.09 Output Power Temperature Coefficient -0.028 Max 15.5 Units GHz dB dB dB dB dBm % dB/°C dB/°C Preliminary Datasheet: Rev - 12-12-14 © 2014 TriQuint - 2 of 15 - Disclaimer: Subject to change without notice www.triquint.com TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier Thermal and Reliability Information Parameter Thermal Resistance (θJC) (1) Channel Temperature (TCH) (No RF drive) Median Lifetime (TM) Test Conditions Tbase = 85°C VD = 22 V, IDQ = 900 mA PDISS = 19.8 W Value Units 1.26 ºC/W 110 °C 4.0 x 10^14 Hrs Thermal Resistance (θJC) (1) Tbase = 85°C, CW , VD = 22 V, IDQ = 900 mA Channel Temperature (TCH) (Under RF drive) Freq = 15.25 GHz, VD = 22 V, ID_Drive = 5 A, Median Lifetime (TM) PIN = 24 dBm, POUT = 45.2 dBm, PDISS = 79 W 1.13 ºC/W 174 °C 3.46 x 10^10 Hrs Notes: 1. Thermal resistance measured to back of carrier plate. MMIC mounted on 40 mils CuMo (80/20) carrier using 1.5 mil AuSn. Median Lifetime Test Conditions: VD = 23 V; Failure Criteria = 10% reduction in ID_MAX Median Lifetime, TM (Hours) PDISS (W) Median Lifetime vs. Channel Temperature 1E+18 1E+17 1E+16 1E+15 1E+14 1E+13 1E+12 1E+11 1E+10 1E+09 1E+08 1E+07 1E+06 1E+05 1E+04 FET16 75 100 125 150 175 200 225 250 275 Channel Temperature, TCH (C) 90 85 80 75 70 65 60 55 50 45 40 35 30 12 PDISS vs. Frequency vs. Temperature -40 °C, PIN = 18 dBm 25 °C, PIN = 21 dBm 85 °C, PIN = 24 dBm VD = 22 V, IDQ = 900 mA 12.5 13 13.5 14 14.5 15 15.5 Frequency (GHz) 16 Preliminary Datasheet: Rev - 12-12-14 © 2014 TriQuint - 3 of 15 - Disclaimer: Subject to change without notice www.triquint.com TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier Typical Performance (Small Signal) S21 (dB) S21 (dB) 39 36 33 30 27 24 21 18 15 12 12 Gain vs. Frequency vs. Temperature 12.5 -40 °C 25 °C 85 °C VD = 22 V, IDQ = 900 mA 13 13.5 14 14.5 15 Frequ.


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