Document
Applications
Satellite Communications Data Link Radar
TGA2239
13 – 15.5 GHz 35 W GaN Power Amplifier
Product Features
Frequency Range: 13 – 15.5 GHz PSAT: >45.5 dBm @ PIN = 21 dBm
PAE: >32% @ PIN = 21 dBm
Large Signal Gain: >24.5 dB Small Signal Gain: 29.5 dB Bias: VD = 22 V, IDQ = 900 mA, VG = -2.7 V Typical Process Technology GaN-TQGaN15 Chip Dimensions: 5.00 x 6.65 x 0.10 mm Performance Under CW Operation
Functional Block Diagram
23
4
5
1
10 9
8
7
6
General Description
TriQuint’s TGA2239 is a Ku-band, high power MMIC amplifier fabricated on TriQuint’s production 0.15um GaN on SiC process. The TGA2239 operates from 13 – 15.5 GHz and provides a superior combination of power, gain and efficiency by achieving greater than 35 W of saturated output power with 24.5dB of large signal gain and greater than 32% power-added efficiency.
This superior performance provides system designers the flexibility to improve system performance while reducing size and cost.
The TGA2239 is fully matched to 50 Ohms with integrated DC blocking capacitors on RF ports simplifying system integration. It is ideally suited for military and commercial Ku-band radar and satellite communication systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1 2, 10 3, 9 4, 8 5, 7 6
Symbol
RF In VG1-2 VG3 VD1-2 VD3 RF Out
Ordering Information
Part
TGA2239
ECCN Description
3A001.b.2.b
13 – 15.5 GHz 35W GaN Power Amplifier
Preliminary Datasheet: Rev - 12-12-14 © 2014 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2239
13 – 15.5 GHz 35 W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD)
Gate Voltage Range (VG) Drain Current (ID1-2) Drain Current (ID3) Gate Current (IG1-2) @ TCH = 200°C
Gate Current (IG3) @ TCH = 200°C
Power Dissipation (PDISS), 85°C, CW Input Power (PIN), CW, 50Ω, VD = 22 V, IDQ = 900 mA, 85°C
23 V -5 to -0 V 2.8 A 4.3 A -5 to 14.5 mA -12.5 to 38 mA
117 W
33 dBm
Input Power (PIN), CW, VSWR 3:1, VD = 22 V, IDQ = 900 mA, 85°C
30 dBm
Channel Temperature (TCH) Mounting Temperature (30 seconds)
275°C 320°C
Storage Temperature
-55 to 150°C
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied.
Recommended Operating Conditions
Parameter
Value
Drain Voltage (VD)
22 V
Drain Current (IDQ)
900 mA (Total)
Gate Voltage (VG)
-2.7 V (Typ.)
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25°C , VD = 22 V, IDQ = 900 mA, VG = -2.7 V Typical, CW
Parameter
Min Typical
Operational Frequency Range
13
Small Signal Gain
29.5
Input Return Loss
>13
Output Return Loss
>7.5
Power Gain (Pin = 21dBm)
>24.5
Output Power (Pin = 21dBm)
>45.5
Power Added Efficiency (Pin = 21dBm)
>32
Small Signal Gain Temperature Coefficient
-0.09
Output Power Temperature Coefficient
-0.028
Max
15.5
Units
GHz dB dB dB dB dBm % dB/°C dB/°C
Preliminary Datasheet: Rev - 12-12-14 © 2014 TriQuint
- 2 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2239
13 – 15.5 GHz 35 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Thermal Resistance (θJC) (1)
Channel Temperature (TCH) (No RF drive) Median Lifetime (TM)
Test Conditions
Tbase = 85°C VD = 22 V, IDQ = 900 mA PDISS = 19.8 W
Value Units
1.26 ºC/W 110 °C 4.0 x 10^14 Hrs
Thermal Resistance (θJC) (1)
Tbase = 85°C, CW , VD = 22 V, IDQ = 900 mA
Channel Temperature (TCH) (Under RF drive) Freq = 15.25 GHz, VD = 22 V, ID_Drive = 5 A,
Median Lifetime (TM)
PIN = 24 dBm, POUT = 45.2 dBm, PDISS = 79 W
1.13 ºC/W 174 °C 3.46 x 10^10 Hrs
Notes: 1. Thermal resistance measured to back of carrier plate. MMIC mounted on 40 mils CuMo (80/20) carrier using 1.5 mil AuSn.
Median Lifetime
Test Conditions: VD = 23 V; Failure Criteria = 10% reduction in ID_MAX
Median Lifetime, TM (Hours) PDISS (W)
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05 1E+04
FET16
75 100 125 150 175 200 225 250 275
Channel Temperature, TCH (C)
90 85 80 75 70 65 60 55 50 45 40 35 30
12
PDISS vs. Frequency vs. Temperature
-40 °C, PIN = 18 dBm 25 °C, PIN = 21 dBm 85 °C, PIN = 24 dBm VD = 22 V, IDQ = 900 mA 12.5 13 13.5 14 14.5 15 15.5
Frequency (GHz)
16
Preliminary Datasheet: Rev - 12-12-14 © 2014 TriQuint
- 3 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2239
13 – 15.5 GHz 35 W GaN Power Amplifier
Typical Performance (Small Signal)
S21 (dB) S21 (dB)
39 36 33 30 27 24 21 18 15 12
12
Gain vs. Frequency vs. Temperature
12.5
-40 °C 25 °C 85 °C
VD = 22 V, IDQ = 900 mA
13 13.5 14 14.5 15 Frequ.