JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
SD106WS SCHOTTKY BARRIER DIODE
FE...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
SD106WS
SCHOTTKY BARRIER DIODE
FEATURES
Low turn-on voltage Fast switching Microminiature plastic package This device is protected by a PN junction guard ring
against excessive voltage, such as electrostatic discharge Ideal for protection of MOS devices, steering,
biasing, and coupling diodes for fast switching and low logic level applications
MARKING: S21
SOD-323
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Non-repetitive peak reverse voltage Forward current Non-repetitive Forward Surge Current @t= 8.3ms Power dissipation Thermal resistance junction to ambient Junction temperature Storage temperature
Symbol
VRM IFM IFSM Ptot RөJA TJ TSTG
Electrical Ratings @Ta=25℃
Parameter Reverse breakdown voltage
Symbol VR
Min 30
Forward voltage
VF
Reverse current Capacitance between terminals
IR CT
Limit 30 200 1 250 400 125 -55~+150
Typ Max Unit V
260 320
mV 420 490 550
5 µA 15 pF
Unit
V mA A mW ℃/W ℃ ℃
Conditions IR=100uA
IF=2mA IF=15mA IF=100mA IF=200mA VR=30V VR=10V,f=1MHz
www.cj-elec.com
1
D,Mar,2015
Typical Characteristics
Forward Characteristics
200 100
=100℃
T
a
=25℃
FORWARD CURRENT I (mA) F
30 10
T a
3 1
0.3
0.1 0.0
0.1 0.2 0.3 0.4
FORWARD VOLTAGE V (V) F
0.5
REVERSE CURRENT I (uA) R
1000
300 100
30 10
3 1
0.3 0.1
...