Document
ADVANCE INFORMATION
DMC6040SSDQ
60V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device Q1 N-Channel Q2 P-Channel
BVDSS 60V -60V
RDS(ON) Max
40mΩ @ VGS = 10V 55mΩ @ VGS = 4.5V 110mΩ @ VGS = -10V 130mΩ @ VGS = -4.5V
ID TA = +25°C
6.5A 5.6A -3.9A -3.6A
Features and Benefits
Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
DC-DC Converters Power Management Functions Backlighting
SO-8
Mechanical Data
Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate)
D1 D2
Pin1 Top View
S1 D1 G1 D1 S2 D2 G2 D2
Top View Pin Configuration
G1 G2
S1
Q1 N-Channel MOSFET
S2
Q2 P-Channel MOSFET
Ordering Information (Note 5)
Notes:
Part Number DMC6040SSDQ-13
Case SO-8
Packaging 2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
C6040SD
YY WW
14
Chengdu A/T Site
DMC6040SSDQ
Document number: DS38828 Rev. 1 - 2
85
C6040SD
YY WW
14
= Manufacturer’s Marking C6040SD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 16 = 2016) WW = Week (01 - 53)
1 of 9 www.diodes.com
April 2016
© Diodes Incorporated
DMC6040SSDQ
ADVANCE INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = -10V
Steady State
t<10s
Maximum Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current (Note 8) L = 0.1mH Avalanche Energy (Note 8) L = 0.1mH
TA = +25°C TA = +70°C
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
ID
IS IDM IAS EAS
Q1 60 ±20
5.1 4.1
6.5 5.2
2.1 28 17.2 14.7
Q2 -60 ±20
-3.1 -2.5
-3.9 -3.1
-2.1 -19 -17.6 15.4
Units V V
A
A
A A A mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range
TA = +25°C TA = +70°C Steady State
t < 10s
TA = +25°C TA = +70°C Steady State
t<10s
Symbol PD
RθJA
PD
RθJA RθJC TJ, TSTG
Value 1.24 0.8 101 61 1.56 1.0 80 49 14.7 -55 to +150
Units W
°C/W W
°C/W °C
Electrical Characteristics – N-Channel Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Symbol
BVDSS IDSS IGSS
VGS(TH)
RDS(ON)
VSD
CISS COSS CRSS
RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR
Min
60
1
Typ
33 37 0.7
1,130 69 42 1.7 20.8 9.4 3.3 3.0 3.6 1.8 20.1 4.3 14.2 7.5
Max
1 100
3 40 55 1.2
Unit V µA nA V mΩ V
pF Ω
nC
ns
ns nC
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. UIS in production with L = 0.1mH, starting TA = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = 250µA VDS = 48V, VGS = 0V VGS = 20V, VDS = 0V
VDS .