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DMC6040SSDQ Dataheets PDF



Part Number DMC6040SSDQ
Manufacturers Diodes
Logo Diodes
Description MOSFET
Datasheet DMC6040SSDQ DatasheetDMC6040SSDQ Datasheet (PDF)

ADVANCE INFORMATION DMC6040SSDQ 60V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Q1 N-Channel Q2 P-Channel BVDSS 60V -60V RDS(ON) Max 40mΩ @ VGS = 10V 55mΩ @ VGS = 4.5V 110mΩ @ VGS = -10V 130mΩ @ VGS = -4.5V ID TA = +25°C 6.5A 5.6A -3.9A -3.6A Features and Benefits  Low Input Capacitance  Low On-Resistance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Stand.

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ADVANCE INFORMATION DMC6040SSDQ 60V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Q1 N-Channel Q2 P-Channel BVDSS 60V -60V RDS(ON) Max 40mΩ @ VGS = 10V 55mΩ @ VGS = 4.5V 110mΩ @ VGS = -10V 130mΩ @ VGS = -4.5V ID TA = +25°C 6.5A 5.6A -3.9A -3.6A Features and Benefits  Low Input Capacitance  Low On-Resistance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  DC-DC Converters  Power Management Functions  Backlighting SO-8 Mechanical Data  Case: SO-8  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.074 grams (Approximate) D1 D2 Pin1 Top View S1 D1 G1 D1 S2 D2 G2 D2 Top View Pin Configuration G1 G2 S1 Q1 N-Channel MOSFET S2 Q2 P-Channel MOSFET Ordering Information (Note 5) Notes: Part Number DMC6040SSDQ-13 Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 85 C6040SD YY WW 14 Chengdu A/T Site DMC6040SSDQ Document number: DS38828 Rev. 1 - 2 85 C6040SD YY WW 14 = Manufacturer’s Marking C6040SD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 16 = 2016) WW = Week (01 - 53) 1 of 9 www.diodes.com April 2016 © Diodes Incorporated DMC6040SSDQ ADVANCE INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 7) VGS = -10V Steady State t<10s Maximum Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current (Note 8) L = 0.1mH Avalanche Energy (Note 8) L = 0.1mH TA = +25°C TA = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID IS IDM IAS EAS Q1 60 ±20 5.1 4.1 6.5 5.2 2.1 28 17.2 14.7 Q2 -60 ±20 -3.1 -2.5 -3.9 -3.1 -2.1 -19 -17.6 15.4 Units V V A A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Total Power Dissipation (Note 6) Characteristic Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range TA = +25°C TA = +70°C Steady State t < 10s TA = +25°C TA = +70°C Steady State t<10s Symbol PD RθJA PD RθJA RθJC TJ, TSTG Value 1.24 0.8 101 61 1.56 1.0 80 49 14.7 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics – N-Channel Q1 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol BVDSS IDSS IGSS VGS(TH) RDS(ON) VSD CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR Min 60   1                  Typ     33 37 0.7 1,130 69 42 1.7 20.8 9.4 3.3 3.0 3.6 1.8 20.1 4.3 14.2 7.5 Max  1 100 3 40 55 1.2               Unit V µA nA V mΩ V pF Ω nC ns ns nC Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. UIS in production with L = 0.1mH, starting TA = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. Test Condition VGS = 0V, ID = 250µA VDS = 48V, VGS = 0V VGS = 20V, VDS = 0V VDS .


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