MOSFET
DMC1030UFDBQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
BVDSS
Q1 N-Channel
12V
Q2 P-Channel...
Description
DMC1030UFDBQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
BVDSS
Q1 N-Channel
12V
Q2 P-Channel
-12
RDS(ON) MAX
34mΩ @ VGS = 4.5V 40mΩ @ VGS = 2.5V 50mΩ @ VGS = 1.8V 70mΩ @ VGS = 1.5V 59mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V 215mΩ @ VGS = -1.5V
ID MAX TA = +25°C
5.1A 4.7A 4.2A 3.6A -3.9A -3.3A -2.8A -2.0A
Description and Applications
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
Load Switch Power Management Functions Portable Power Adaptors
U-DFN2020-6 (Type B)
ESD PROTECTED
D2
D2 G1 S1
Pin1
S2 G2 DD1
D1
Bottom View
Features
Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)
Mechanical Data
Case: U-DFN2020-6 (Type B) Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4 Terminals Connections: See Diagram Below Weight: 0.0065 grams (Approximate)
D1 D2
G1 G2
Gate Protection Diode
S1
Gate Protection Diode
S2
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Ordering Informatio...
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