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DMC1030UFDBQ

Diodes

MOSFET

DMC1030UFDBQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BVDSS Q1 N-Channel 12V Q2 P-Channel...


Diodes

DMC1030UFDBQ

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Description
DMC1030UFDBQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BVDSS Q1 N-Channel 12V Q2 P-Channel -12 RDS(ON) MAX 34mΩ @ VGS = 4.5V 40mΩ @ VGS = 2.5V 50mΩ @ VGS = 1.8V 70mΩ @ VGS = 1.5V 59mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V 215mΩ @ VGS = -1.5V ID MAX TA = +25°C 5.1A 4.7A 4.2A 3.6A -3.9A -3.3A -2.8A -2.0A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Load Switch  Power Management Functions  Portable Power Adaptors U-DFN2020-6 (Type B) ESD PROTECTED D2 D2 G1 S1 Pin1 S2 G2 DD1 D1 Bottom View Features  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Max Height  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: U-DFN2020-6 (Type B)  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Terminals Connections: See Diagram Below  Weight: 0.0065 grams (Approximate) D1 D2 G1 G2 Gate Protection Diode S1 Gate Protection Diode S2 N-CHANNEL MOSFET P-CHANNEL MOSFET Internal Schematic Ordering Informatio...




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