N-channel Power MOSFET
STF15N65M5, STFI15N65M5, STP15N65M5
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in TO-220FP, I2PAKFP and ...
Description
STF15N65M5, STFI15N65M5, STP15N65M5
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
Datasheet — production data
Features
Order codes
STF15N65M5 STFI15N65M5 STP15N65M5
VDS @ TJmax
RDS(on) max
ID
710 V < 0.34 Ω 11 A
■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
3 2 1
TO-220FP
TAB
1 23
I2PAKFP
3 2 1
TO-220
Figure 1. Internal schematic diagram $ 4!"
' 3
!-V
Table 1. Device summary Order codes STF15N65M5 STFI15N65M5 STP15N65M5
Marking 15N65M5
Package
TO-220FP I2PAKFP TO-220
Packaging Tube
November 2012
This is information on a product in full production.
Doc ID 022863 Rev 2
1/17
www.st.com
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Contents
Contents
STF15N65M5, STFI15N65M5, STP15N65M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . ....
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