JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
SD107WS SCHOTTKY BARRIER DIODE
S...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
SD107WS
SCHOTTKY BARRIER DIODE
SOD-323
FEATURES
z Low Forward Voltage Drop z Guard Ring Die Construction for Transient Protection
z Ideal for Low Logic Level Applications z Low Capacitance z Also Available in Lead Free Version
MARKING: SG
SG
SG
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,the normal device
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Non-repetitive peak reverse voltage
Forward current
Non-repetitive Peak Forward Surge Current @t = 8 .3ms
Power dissipation
TC=25℃
Thermal resistance junction to ambient
Junction temperature
Storage temperature
VRM IFM IFSM Ptot TөJA TJ TSTG
30 100
2 250 400 125 -55~+150
Electrical Ratings @Ta=25℃
Parameter Reverse breakdown voltage
Forward voltage
Reverse current Capacitance between terminals
Symbol VR
VF
IR CT
Min. 30
Typ.
300 360 430 500
7
Max. Unit V
mV 550 800
1 µA pF
Unit
V mA
A mW ℃/W ℃ ℃
Conditions IR=100µA
IF=2mA IF=15mA IF=50mA IF=100mA VR=25V VR=10V,f=1MHz
www.cj-elec.com
1
D,Mar,2015
Typical Characteristics
Forward Characteristics
100
=100℃
T
a
=25℃
FORWARD CURRENT IF (mA)
30 10
T a
3 1
0.3
0.1 0.0
0.1 0.2 0.3 0.4
FORWARD VOLTAGE VF (V)
0.5
Capacitance Characteristics
20
Ta=25℃ f=1MHz
15
CAPACITANCE BETWEEN TERMINALS CT (pF)
10
5
0 0 5 10 15 20
REVERSE VOLTAGE VR (V)
POWER DISSIPATION PD (mW)
REVERSE...