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SD107WS

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD107WS SCHOTTKY BARRIER DIODE S...


JCET

SD107WS

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD107WS SCHOTTKY BARRIER DIODE SOD-323 FEATURES z Low Forward Voltage Drop z Guard Ring Die Construction for Transient Protection z Ideal for Low Logic Level Applications z Low Capacitance z Also Available in Lead Free Version MARKING: SG SG SG The marking bar indicates the cathode Solid dot = Green molding compound device,if none,the normal device Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Non-repetitive peak reverse voltage Forward current Non-repetitive Peak Forward Surge Current @t = 8 .3ms Power dissipation TC=25℃ Thermal resistance junction to ambient Junction temperature Storage temperature VRM IFM IFSM Ptot TөJA TJ TSTG 30 100 2 250 400 125 -55~+150 Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Symbol VR VF IR CT Min. 30 Typ. 300 360 430 500 7 Max. Unit V mV 550 800 1 µA pF Unit V mA A mW ℃/W ℃ ℃ Conditions IR=100µA IF=2mA IF=15mA IF=50mA IF=100mA VR=25V VR=10V,f=1MHz www.cj-elec.com 1 D,Mar,2015 Typical Characteristics Forward Characteristics 100 =100℃ T a =25℃ FORWARD CURRENT IF (mA) 30 10 T a 3 1 0.3 0.1 0.0 0.1 0.2 0.3 0.4 FORWARD VOLTAGE VF (V) 0.5 Capacitance Characteristics 20 Ta=25℃ f=1MHz 15 CAPACITANCE BETWEEN TERMINALS CT (pF) 10 5 0 0 5 10 15 20 REVERSE VOLTAGE VR (V) POWER DISSIPATION PD (mW) REVERSE...




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