74LVC2G00-Q100

74LVC2G00-Q100 Dual 2-input NAND gate Rev. 1 — 3 September 2015 Product data sheet 1. General description The 74LVC2G00-Q100 provides a 2-input NAND gate function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 V and 5 V environment. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications. 2. Features and benefits  Automotive product qualification in accordance with AEC-Q100 (Grade 1)  Specified from 40 C to +85 C and from 40 C to +125 C  Wide supply voltage range from 1.65 V to 5.5 V  5 V tolerant outputs for interfacing with 5 V logic  High noise immunity  24 mA output drive (VCC = 3.0 V)  CMOS low power consumption  Complies with JEDEC standard:  JESD8-7 (1.65 V to 1.95 V)  JESD8-5 (2.3 V to 2.7 V)  JESD8-B/JESD36 (2.7 V to 3.6 V)  Latch-up performance exceeds 250 mA  Direct interface with TTL levels  Inputs accept voltages up to 5 V  ESD protection:  MIL-STD-883, method 3015 exceeds 2000 V  HBM JESD22-A114F exceeds 2000 V  MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 ) NXP Semiconductors 74LVC2G00-Q100 Dual 2-input NAND gate 3. Ordering information Table 1. Ord...