FMH30N60S1

FMH30N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Applications UPS Server Telecom Power conditioner system Power supply Outline Drawings [mm] TO-3P 15.5max 13 ± 0.2 10 ± 0.2 φ3.2± 0.1 1.5±0.2 4.5±0.2 5 ±0.1 1.5 3 ±0.2 19.5 ±0.2 14.5 ±0.2 1.6 +0.3 -0.1 2.2 +0.3 -0.1 5.45 ± 0.2 1.6 +0.3 -0.1 1.1 +0.2 -0.1 5.45 ± 0.2 PRE-SOLDER 0.5 +0.2 0 1.5 CONNECTION 1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-3P DIMENSIONS ARE IN MILLIMETERS. Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Description Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Note *1 : Limited by maximum channel temperature. Note *2 : Tch≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch=25°C, IAS=4A, L=97.3mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C. Note *5 : IF≤-ID, dV/dt=12kV/μs, VDD≤400V, Tch≤150°C. Characteristics 60...