DF2S6.8S

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.8S DF2S6.8S Product for Use Only as Protection against Electrostatic Discharge (ESD). Unit: mm CATHODE MARK * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z 2terminal ultra small package suitable for mounting on small space. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Power dissipation Junction temperature Storage temperature range P 150* mW Tj 150 °C Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ⎯ reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA ⎯ absolute maximum ratings. TOSHIBA 1-1K1A Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Weight: 0.0011 g (typ.) Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. Electrical Characteristics (Ta = 25°C) Characteristic Zener voltage Dynamic impedance Reverse current Total capacitanc...