ESD Protection Diodes
ESD Protection Diodes Silicon Epitaxial Planar
DF2B7SL
DF2B7SL
1. Applications
• ESD Protection
Note: This product is ...
Description
ESD Protection Diodes Silicon Epitaxial Planar
DF2B7SL
DF2B7SL
1. Applications
ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
1: Pin 1 2: Pin 2
SL2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Note
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact) Electrostatic discharge voltage(IEC61000-4-2)(Air)
VESD
(Note 1)
±17 ±20
kV kV
Peak pulse power
PPK 45 W
Peak pulse current Junction temperature
IPP (Note 2) Tj
3 150
A
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2. Note 2: According to IEC61000-4-5.
Start of commercial production
2014-10
1 2015-04-03 Rev.5.0
4. Electrical Characteristics (Un...
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