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TLP665L

Toshiba Semiconductor

Photocouplers

Photocouplers GaAs Infrared LED & Photo Triac TLP665L,TLP665LF TLP665L,TLP665LF 1. Applications • Solid-State Relays •...


Toshiba Semiconductor

TLP665L

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Photocouplers GaAs Infrared LED & Photo Triac TLP665L,TLP665LF TLP665L,TLP665LF 1. Applications Solid-State Relays Triac Drivers Home Electric Appliances Office Equipment 2. General The TLP665L consists of a non zero crossing photo triac, optically coupled to a gallium arsenide infrared emitting diode. The TLP665L is housed in the DIP6 package and guarantees insulation thickness of 0.5 mm (min). Therefore, the TLP665L meets the reinforced insulation class requirements of international safety standards. 3. Features (1) Peak off-state voltage: 800 V (min) (2) Non zero crossing functionary (NZC) (3) Trigger LED current: 10 mA (max) (4) On-state current: 100 mA (max) (5) Isolation voltage: 5000 Vrms (min) (6) Safety standards UL-approved: UL1577 File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 CQC-approved: GB4943.1, GB8898 VDE-approved: Option (D4) EN60747-5-5 (Note) Maximum operating insulation voltage: 890 Vpeak / 1140 Vpeak (Note1) Highest permissible overvoltage: 8000 Vpeak Note: When an EN60747-5-5 approved type is needed, please designate the Option (D4). Note1: When maximum operating insulation voltage 1140 Vpeak is needed, please designate the TLP665LF. Table 3.1 Mechanical Parameters Characteristics Creepage distances Clearance distances Internal isolation thickness 7.62 mm Pitch TLP665L 7.0 (min) 7.0 (min) 0.5 (min) 10.16 mm Pitch TLP665LF 8.0 (min) 8.0 (min) 0.5 (min) Unit mm Table 3.2 Trigger LED Current (Note) (Unle...




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