N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP70SL380AS
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & ...
Description
Advanced Power Electronics Corp.
AP70SL380AS
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
G
S
Description
AP70SL380A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
VDS @ Tj,max.
RDS(ON) ID3
750V 0.38Ω
11A
G D S TO-263(S)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
700 V
VGS ID@TC=25℃ ID@TC=100℃ IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
+20 V 11 A 6.5 A 24 A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
50
V/ns
PD@TC=25℃ PD@TA=25℃ EAS dv/dt
Total Power Dissipation Total Power Dissipation4 Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6
78.1 W 3.12 W 75 mJ 15 V/ns
TSTG
Storage Temperature Range
-55 to 150
℃
TJ Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal R...
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