N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP60SL600AJ
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & ...
Description
Advanced Power Electronics Corp.
AP60SL600AJ
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
G
S
Description
AP60SL600A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The straight lead version TO-251 package is widely preferred for all commercial-industrial through hole applications.
VDS @ Tj,max.
RDS(ON) ID3
650V 0.6Ω
7A
G DS
TO-251(J)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM dv/dt
PD@TC=25℃ PD@TA=25℃ EAS dv/dt
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy4 Peak Diode Recovery dv/dt5
600 +20
7 4.4 18 50 56.8 1.13 36.7 15
V V A A A V/ns W W mJ V/ns
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value 2.2 110
Units ℃/W ℃/W
Data & specifications subject to change wi...
Similar Datasheet