AP20GT60W

Advanced Power Electronics Corp. AP20GT60W Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ.=1.8V@IC=20A ▼ RoHS Compliant & Halogen-Free G C E C VCES IC TO-3P G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCES Collector-Emitter Voltage 600 VGE IC@TC=25oC IC@TC=100oC ICM PD@TC=25oC Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Maximum Power Dissipation +20 40 20 160 125 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range 150 600V 20A C E Units V V A A A W ℃ ℃ Notes: 1.Pulse width limited by Max. junction temperature . . Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-Case Rthj-a Thermal Resistance Junction-Ambient Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions IGES ICES VCE(sat) VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Cies Coes Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input Capacitance Output Capacitance VGE=+20V, VCE=0V VCE=600V, VGE=0V VGE=15V, IC=20A VGE=15V, IC=35A VCE=VGE, IC=250...