Document
Advanced Power Electronics Corp.
Features
▼ High Speed Switching ▼ Low Saturation Voltage
VCE(sat),typ.=1.8V@IC=20A ▼ RoHS Compliant Product
AP20GT60I
RoHS-compliant Product N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
GC E
TO-220CFM(I)
VCES IC
G
600V 20A
C
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE IC@TC=25oC IC@TC=100oC
ICM PD@TC=25oC
TSTG
TJ
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Rating 600 +20 40 20 160 25
-55 to 150 150
E
Units V V A A A W ℃ ℃
Notes:
1.Pulse width limited by Max. junction temperature .
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
IGES ICES VCE(sat) VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon
Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss
VGE=+20V, VCE=0V
VCE=600V, VGE=0V
VGE=15V, IC=20A
VGE=15V, IC=35A
VCE=VGE, IC=250uA
IC=20A
VCC=480V
VGE=15V VCE=480V, Ic=20A, VGE=15V, RG=5Ω, Inductive Load
Eoff Turn-Off Switching Loss Cies Input Capacitance Coes Output Capacitance
VGE=0V VCE=30V
Cres Reverse Transfer Capacitance
f=1.0MHz
Value 5 65
Units ℃/W ℃/W
Min. Typ. Max. Units
- - +100 nA
- - 25 uA
- 1.8 2.5 V
- 2 2.7 V
2 - 6V
- 100 160 nC
- 24 - nC
- 40 - nC
- 50 - ns
- 20 - ns
- 135 -
ns
- 190 380 ns
- 0.3 - mJ
- 0.9 - mJ
- 3400 5440 pF
- 75 - pF
- 50 - pF
Data and specifications subject to change without notice
1 201105102
AP20GT60I
IC , Collector Current (A)
200
T C =25 o C
160
120
20V 18V 15V 12V V GE =10V
80
40
0 0 4 8 12 16
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
200
V GE =15V
160
T C =25 ℃
120
T C =150 ℃
80
40
0 02468
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage Characteristics
1.6
I C =1mA
1.2
IC , Collector Current(A)
Normalized VGE(th) (V)
0.8
0.4
0 -50 0 50 100 150
Junction Temperature ( o C )
Fig 5. Gate Threshold Voltage v.s. Junction Temperature
Capacitance (pF)
VCE(sat) ,Saturation Voltage(V)
IC , Collector Current (A)
200
T C =150 o C
160
120
20V 18V 15V 12V V GE =10V
80
40
0 0 4 8 12 16 20
V CE , Collector-Emitter Voltage (V)
Fig 2. Typical Output Characteristics
3
V GE = 15 V
3
2
2
I C = 40 A I C =20A
1
1 0 40 80 120 160
Junction Temperature ( o C)
Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature
f=1.0MHz
5000
4000
C ies
3000
2000
--
1000
C oes C res
0 1 5 9 13 17 21 25 29 33 37
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
2
VGE , Gate -Emitter Voltage (V)
VCE , Collector-Emitter Voltage(V)
Power Dissipation (W)
30
25
20
15
10
5
0 0 25 50 75 100 125 150
Junction Temperature ( ℃ )
Fig7. Power Dissipation vs. Junction Temperature
20
T C =25 o C
15
10
5
I C = 60 A 40 A 20 A
0 0 4 8 12 16
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
20
16
I C =20A V CC =480V
12
8
4
0 0 20 40 60 80 100 120
Q G , Gate Charge (nC)
Fig 11. Gate Charge Characterisitics
IC, Peak Collector Current(A)
VCE , Collector-Emitter Voltage(V)
Normalized Thermal Response (Rthjc)
AP20GT60I
1
Duty factor=0.5 0.2
0.1 0.1
0.05
0.02 0.01
0.01 Single Pulse
PDM
t
T
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
0.001 0.00001
0.0001
0.001
0.01
0.1
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
1
20
T C = 150 o C
15
10
5
I C = 60 A 40 A 20 A
0 0 4 8 12 16 20
V GE , Gate-Emitter Voltage(V)
Fig 10. Saturation Voltage vs. VGE
1000
V GE =15V T C =125 o C
100
10
Safe Operating Area
1 0.1 1 10 100 1000
V CE , Collector-Emitter Voltage(V)
Fig 12. Turn-off SOA
10000
3
.