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AP20GT60I Dataheets PDF



Part Number AP20GT60I
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP20GT60I DatasheetAP20GT60I Datasheet (PDF)

Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ.=1.8V@IC=20A ▼ RoHS Compliant Product AP20GT60I RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR GC E TO-220CFM(I) VCES IC G 600V 20A C Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM PD@TC=25oC TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Maximum Power Dissipation S.

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Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ.=1.8V@IC=20A ▼ RoHS Compliant Product AP20GT60I RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR GC E TO-220CFM(I) VCES IC G 600V 20A C Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM PD@TC=25oC TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 600 +20 40 20 160 25 -55 to 150 150 E Units V V A A A W ℃ ℃ Notes: 1.Pulse width limited by Max. junction temperature . Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-Case Rthj-a Thermal Resistance Junction-Ambient Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions IGES ICES VCE(sat) VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss VGE=+20V, VCE=0V VCE=600V, VGE=0V VGE=15V, IC=20A VGE=15V, IC=35A VCE=VGE, IC=250uA IC=20A VCC=480V VGE=15V VCE=480V, Ic=20A, VGE=15V, RG=5Ω, Inductive Load Eoff Turn-Off Switching Loss Cies Input Capacitance Coes Output Capacitance VGE=0V VCE=30V Cres Reverse Transfer Capacitance f=1.0MHz Value 5 65 Units ℃/W ℃/W Min. Typ. Max. Units - - +100 nA - - 25 uA - 1.8 2.5 V - 2 2.7 V 2 - 6V - 100 160 nC - 24 - nC - 40 - nC - 50 - ns - 20 - ns - 135 - ns - 190 380 ns - 0.3 - mJ - 0.9 - mJ - 3400 5440 pF - 75 - pF - 50 - pF Data and specifications subject to change without notice 1 201105102 AP20GT60I IC , Collector Current (A) 200 T C =25 o C 160 120 20V 18V 15V 12V V GE =10V 80 40 0 0 4 8 12 16 V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics 200 V GE =15V 160 T C =25 ℃ 120 T C =150 ℃ 80 40 0 02468 V CE , Collector-Emitter Voltage (V) Fig 3. Typical Saturation Voltage Characteristics 1.6 I C =1mA 1.2 IC , Collector Current(A) Normalized VGE(th) (V) 0.8 0.4 0 -50 0 50 100 150 Junction Temperature ( o C ) Fig 5. Gate Threshold Voltage v.s. Junction Temperature Capacitance (pF) VCE(sat) ,Saturation Voltage(V) IC , Collector Current (A) 200 T C =150 o C 160 120 20V 18V 15V 12V V GE =10V 80 40 0 0 4 8 12 16 20 V CE , Collector-Emitter Voltage (V) Fig 2. Typical Output Characteristics 3 V GE = 15 V 3 2 2 I C = 40 A I C =20A 1 1 0 40 80 120 160 Junction Temperature ( o C) Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature f=1.0MHz 5000 4000 C ies 3000 2000 -- 1000 C oes C res 0 1 5 9 13 17 21 25 29 33 37 V CE , Collector-Emitter Voltage (V) Fig 6. Typical Capacitance Characterisitics 2 VGE , Gate -Emitter Voltage (V) VCE , Collector-Emitter Voltage(V) Power Dissipation (W) 30 25 20 15 10 5 0 0 25 50 75 100 125 150 Junction Temperature ( ℃ ) Fig7. Power Dissipation vs. Junction Temperature 20 T C =25 o C 15 10 5 I C = 60 A 40 A 20 A 0 0 4 8 12 16 V GE , Gate-Emitter Voltage(V) Fig 9. Saturation Voltage vs. VGE 20 16 I C =20A V CC =480V 12 8 4 0 0 20 40 60 80 100 120 Q G , Gate Charge (nC) Fig 11. Gate Charge Characterisitics IC, Peak Collector Current(A) VCE , Collector-Emitter Voltage(V) Normalized Thermal Response (Rthjc) AP20GT60I 1 Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse PDM t T Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance 1 20 T C = 150 o C 15 10 5 I C = 60 A 40 A 20 A 0 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) Fig 10. Saturation Voltage vs. VGE 1000 V GE =15V T C =125 o C 100 10 Safe Operating Area 1 0.1 1 10 100 1000 V CE , Collector-Emitter Voltage(V) Fig 12. Turn-off SOA 10000 3 .


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