DatasheetsPDF.com

AP20GT60ASP-HF Dataheets PDF



Part Number AP20GT60ASP-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP20GT60ASP-HF DatasheetAP20GT60ASP-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP20GT60ASP-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ.=1.7V@IC=19A ▼ RoHS Compliant Product G C E TO-220(P) VCES IC G 600V 19A C Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=100oC IFM PD@TC=25oC TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode For.

  AP20GT60ASP-HF   AP20GT60ASP-HF


Document
Advanced Power Electronics Corp. AP20GT60ASP-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ.=1.7V@IC=19A ▼ RoHS Compliant Product G C E TO-220(P) VCES IC G 600V 19A C Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=100oC IFM PD@TC=25oC TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Notes: 1.Pulse width limited by Max. junction temperature . Rating 600 +20 33 19 72 8 40 78.1 -55 to 150 150 E Units V V A A A A A W oC oC Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-Case Rthj-c(Diode) Thermal Resistance Junction-Case Rthj-a Thermal Resistance Junction-Ambient Value 1.6 2.4 62 Units oC/W oC/W oC/W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions IGES ICES VCE(sat) VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss VGE=+20V, VCE=0V VCE=600V, VGE=0V VGE=15V, IC=19A VGE=15V, IC=25A VCE=VGE, IC=250uA IC=20A VCC=480V VGE=15V VCE=480V, Ic=20A, VGE=15V, RG=5Ω, Inductive Load Eoff Turn-Off Switching Loss Cies Input Capacitance Coes Output Capacitance VGE=0V VCE=30V Cres Reverse Transfer Capacitance f=1.0MHz Min. Typ. Max. Units - - +100 nA - - 1 mA - 1.7 2.2 V - 1.9 - V 2 - 6V - 95 150 nC - 16 - nC - 35 - nC - 40 - ns - 20 - ns - 140 - ns - 200 400 ns - 0.1 - mJ - 1 - mJ - 2760 4400 pF - 65 - pF - 40 - pF VF FRD Forward Voltage trr FRD Reverse Recovery Time Qrr FRD Reverse Recovery Charge IF=8A IF=8A di/dt = 100 A/μs - 1.8 2.4 V - 30 - ns - 30 - nC Data and specifications subject to change without notice 1 201112271 AP20GT60ASP-HF IC , Collector Current (A) 120 T C =25 o C 100 80 20V 18V 15V 12V V GE =10V 60 40 20 0 02468 V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics 120 V GE =15V 100 80 T C =25 o C 60 T C =150 o C 40 20 0 0123456 V CE , Collector-Emitter Voltage (V) Fig 3. Typical Saturation Voltage Characteristics 8 IC , Collector Current(A) IF , Forward Current (A) 6 T j =150 o C 4 T j =25 o C 2 0 0 0.4 0.8 1.2 1.6 2 V F , Forward Voltage (V) Fig 5. Forward Characteristic of Diode 2.4 Capacitance (pF) VCE(sat) ,Saturation Voltage(V) IC , Collector Current (A) 120 T C =150 o C 100 80 60 20V 18V 15V 12V V GE =10V 40 20 0 0 2 4 6 8 10 V CE , Collector-Emitter Voltage (V) Fig 2. Typical Output Characteristics 3 V GE = 15 V 3 2 2 I C = 40 A I C =30A 1 1 0 40 80 120 160 Junction Temperature ( o C) Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature 5000 f=1.0MHz 4000 3000 C ies 2000 -- 1000 C oes C0 1 5 9 13 17 21 25 29 r3e3s 37 V CE , Collector-Emitter Voltage (V) Fig 6. Typical Capacitance Characterisitics 2 VGE , Gate -Emitter Voltage (V) VCE , Collector-Emitter Voltage(V) Power Dissipation (W) 100 80 60 40 20 0 0 25 50 75 100 125 150 Junction Temperature ( o C ) Fig7. Power Dissipation vs. Junction Temperature 20 T C =25 o C 15 10 5 I C = 60 A 40 A 20 A 0 0 4 8 12 16 V GE , Gate-Emitter Voltage(V) Fig 9. Saturation Voltage vs. VGE 20 16 I C =20A V CC =480V 12 8 4 0 0 20 40 60 80 100 120 Q G , Gate Charge (nC) Fig 11. Gate Charge Characterisitics IC ,Collctor Current(A) VCE , Collector-Emitter Voltage(V) Normalized Thermal Response (Rthjc) AP20GT60ASP-HF 1 Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse PDM t T Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance 20 T C = 150 o C 15 10 5 I C = 60 A 40 A 20 A 0 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) Fig 10. Saturation Voltage vs. VGE 1000 100 10us 10 100us 1 1ms 0.1 T C =25 o C Single Pulse 0.01 1 10 100 10ms 1000 V CE ,Collector - Emitter Voltage(V) Fig 12. SOA Characteristics 10000 3 .


AP20GT60ASI-HF AP20GT60ASP-HF AP20GT60I


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)