Document
Advanced Power Electronics Corp.
AP20GT60ASP-HF
Halogen-Free Product N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
▼ High Speed Switching ▼ Low Saturation Voltage
VCE(sat),typ.=1.7V@IC=19A ▼ RoHS Compliant Product
G C E
TO-220(P)
VCES IC
G
600V 19A
C
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE IC@TC=25oC IC@TC=100oC
ICM IF@TC=100oC
IFM PD@TC=25oC
TSTG
TJ
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Notes:
1.Pulse width limited by Max. junction temperature .
Rating 600 +20 33 19 72 8 40 78.1
-55 to 150 150
E
Units V V A A A A A W oC oC
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Value 1.6 2.4 62
Units oC/W oC/W oC/W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
IGES ICES VCE(sat) VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon
Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss
VGE=+20V, VCE=0V
VCE=600V, VGE=0V
VGE=15V, IC=19A
VGE=15V, IC=25A
VCE=VGE, IC=250uA
IC=20A
VCC=480V
VGE=15V VCE=480V, Ic=20A, VGE=15V, RG=5Ω, Inductive Load
Eoff Turn-Off Switching Loss Cies Input Capacitance Coes Output Capacitance
VGE=0V VCE=30V
Cres Reverse Transfer Capacitance
f=1.0MHz
Min. Typ. Max. Units
- - +100 nA
- - 1 mA
- 1.7 2.2 V
- 1.9 -
V
2 - 6V
- 95 150 nC
- 16 - nC
- 35 - nC
- 40 - ns
- 20 - ns
- 140 -
ns
- 200 400 ns
- 0.1 - mJ
- 1 - mJ
- 2760 4400 pF
- 65 - pF
- 40 - pF
VF FRD Forward Voltage trr FRD Reverse Recovery Time Qrr FRD Reverse Recovery Charge
IF=8A IF=8A di/dt = 100 A/μs
- 1.8 2.4 V - 30 - ns - 30 - nC
Data and specifications subject to change without notice
1 201112271
AP20GT60ASP-HF
IC , Collector Current (A)
120
T C =25 o C
100
80
20V 18V 15V 12V V GE =10V
60
40
20
0 02468
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
120
V GE =15V
100
80 T C =25 o C
60
T C =150 o C
40
20
0 0123456
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage Characteristics
8
IC , Collector Current(A)
IF , Forward Current (A)
6
T j =150 o C
4
T j =25 o C
2
0 0 0.4 0.8 1.2 1.6 2
V F , Forward Voltage (V)
Fig 5. Forward Characteristic of Diode
2.4
Capacitance (pF)
VCE(sat) ,Saturation Voltage(V)
IC , Collector Current (A)
120
T C =150 o C
100
80
60
20V 18V 15V 12V V GE =10V
40
20
0 0 2 4 6 8 10
V CE , Collector-Emitter Voltage (V)
Fig 2. Typical Output Characteristics
3
V GE = 15 V
3
2
2
I C = 40 A I C =30A
1
1 0 40 80 120 160
Junction Temperature ( o C)
Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature
5000 f=1.0MHz
4000
3000
C ies
2000
--
1000
C oes C0
1 5 9 13 17 21 25 29 r3e3s 37
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
2
VGE , Gate -Emitter Voltage (V)
VCE , Collector-Emitter Voltage(V)
Power Dissipation (W)
100
80
60
40
20
0 0 25 50 75 100 125 150
Junction Temperature ( o C )
Fig7. Power Dissipation vs. Junction Temperature
20
T C =25 o C
15
10
5
I C = 60 A 40 A 20 A
0 0 4 8 12 16
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
20
16
I C =20A V CC =480V
12
8
4
0 0 20 40 60 80 100 120
Q G , Gate Charge (nC)
Fig 11. Gate Charge Characterisitics
IC ,Collctor Current(A)
VCE , Collector-Emitter Voltage(V)
Normalized Thermal Response (Rthjc)
AP20GT60ASP-HF
1 Duty factor=0.5
0.2
0.1 0.1
0.05
0.02 0.01
Single Pulse
PDM
t
T
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
20
T C = 150 o C
15
10
5
I C = 60 A 40 A 20 A
0 0 4 8 12 16 20
V GE , Gate-Emitter Voltage(V)
Fig 10. Saturation Voltage vs. VGE
1000
100
10us
10
100us
1
1ms
0.1
T C =25 o C Single Pulse
0.01 1 10
100
10ms
1000
V CE ,Collector - Emitter Voltage(V)
Fig 12. SOA Characteristics
10000
3
.