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AP20G45EJ

Advanced Power Electronics
Part Number AP20G45EJ
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2016
Detailed Description AP20G45EH/J Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Description * High Input Imp...
Datasheet PDF File AP20G45EJ PDF File

AP20G45EJ
AP20G45EJ

Overview
AP20G45EH/J Advanced Power Electronics Corp.
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Description * High Input Impedance * High Pick Current Capability * 4.
5V Gate Drive * Strobe Flash Applications G C E TO-252(H) G C E TO-251(J) VCES ICP G Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage IGEP Pulsed Gate-Emitter Voltage ICP PD@TC=25℃ Pulsed Collector Current Maximum Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Rating 450 ±6 ±8 130 20 -55 to 150 -55 to 150 450V 130A C E Units V V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test...


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