AP20G45EH/J
Advanced Power Electronics Corp.
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Description
* High Input Imp...
AP20G45EH/J
Advanced Power Electronics Corp.
N-CHANNEL INSULATED GATE BIPOLAR
TRANSISTOR
Description
* High Input Impedance * High Pick Current Capability * 4.5V Gate Drive * Strobe Flash Applications
G
C E TO-252(H)
G C E
TO-251(J)
VCES ICP
G
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGE Gate-Emitter Voltage
IGEP Pulsed Gate-Emitter Voltage
ICP PD@TC=25℃
Pulsed Collector Current Maximum Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Rating 450 ±6 ±8 130 20
-55 to 150 -55 to 150
450V 130A
C
E
Units V V V A W ℃ ℃
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
IGES
Gate-Emitter Leakage Current
VGE=6V, VCE=0V
- - 10
ICES
Collector-Emitter Leakage Current (Tj=25℃)
VCE=450V, VGE=0V
- - 10
VCE(sat)
Collector-Emitter Saturation Voltage VGE=4.5V, ICP=130A (Pulsed)
- 58
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
- - 1.2
Qg Total Gate Charge
IC=40A
- 51 -
Qge Gate-Emitter Charge
VCE=300V
-2-
Qgc Gate-Collector Charge
VGE=5V
- 5.4 -
td(on)
Turn-on Delay Time
VCC=200V
- 5.5 -
tr Rise Time
td(off)
Turn-off Delay Time
IC=40A RG=25Ω
- 72 - 640 -
tf Fall Time
VGE=5V
- 2.6 -
Cies Input Capacitance
VGE=0V
- 2095 -
Coes Output Capacitance
VCE=25V
- 145 -
Cres Reverse Transfer Capacitance f=1.0MHz
- 35 -
Rthj-c
Thermal Resistance Junction-Case
- -6
Units uA uA V V nC nC nC ns ns ns ...