AP20G45EH

AP20G45EH/J Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Description * High Input Impedance * High Pick Current Capability * 4.5V Gate Drive * Strobe Flash Applications G C E TO-252(H) G C E TO-251(J) VCES ICP G Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage IGEP Pulsed Gate-Emitter Voltage ICP PD@TC=25℃ Pulsed Collector Current Maximum Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Rating 450 ±6 ±8 130 20 -55 to 150 -55 to 150 450V 130A C E Units V V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. IGES Gate-Emitter Leakage Current VGE=6V, VCE=0V - - 10 ICES Collector-Emitter Leakage Current (Tj=25℃) VCE=450V, VGE=0V - - 10 VCE(sat) Collector-Emitter Saturation Voltage VGE=4.5V, ICP=130A (Pulsed) - 58 VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA - - 1.2 Qg Total Gate Charge IC=40A - 51 - Qge Gate-Emitter Charge VCE=300V -2- Qgc Gate-Collector Charge VGE=5V - 5.4 - td(on) Turn-on Delay Time VCC=200V - 5.5 - tr Rise Time td(off) Turn-off Delay Time IC=40A RG=25Ω - 72 - 640 - tf Fall Time VGE=5V - 2.6 - Cies Input Capacitance VGE=0V - 2095 - Coes Output Capacitance VCE=25V - 145 - Cres Reverse Transfer Capacitance f=1.0MHz - 35 - Rthj-c Thermal Resistance Junction-Case - -6 Units uA uA V V nC nC nC ns ns ns ...