Supertex inc.
DN3135
N-Channel Depletion-Mode Vertical DMOS FETs
Features
►► High input impedance ►► Low input capaci...
Supertex inc.
DN3135
N-Channel Depletion-Mode Vertical DMOS FETs
Features
►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage
Applications
►► Normally-on switches ►► Solid state relays ►► Converters ►► Linear amplifiers ►► Constant current sources ►► Power supply circuits ►► Telecom
General Description
The Supertex DN3135 is a low threshold depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar
transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Ordering Information
Part Number Package Option
Packing
DN3135K1-G TO-236AB (SOT-23) 3000/Reel
DN3135N8-G TO-243AA (SOT-89)
2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Product Summary
BVDSX/BVDGX
RDS(ON)
(max)
350V
35Ω
P...