DN2624ND

– OBSOLETE – N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX 240V RDS(ON) (max) 4.0Ω IDSS (min) 600mA Order Number / Package TO-92 DN2624N3 Die DN2624ND DN2624 Features High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 8 Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage BVDSX BVDGX ± 20V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 300°C SGD TO-92 Note: ...