DN2625

Supertex inc. DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features ►► Very low gate threshold voltage ►► Designed to be source-driven ►► Low switching losses ►► Low effective output capacitance ►► Designed for inductive loads ►► Well matched for low second harmonic when driven by Supertex MD2130 Applications ►► Medical ultrasound beamforming ►► Ultrasonic array focusing transmitter ►► Piezoelectric transducer waveform drivers ►► High speed arbitrary waveform generator ►► Normally-on switches ►► Solid state relays ►► Constant current sources ►► Power supply circuits General Description The Supertex DN2625 is a low threshold depletion-mode (normallyon) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. The DN2625DK6-G contains two MOSFETs in an 8-lead, dual pad DFN package. The DN2625K6-G in the 14-lead QFN package is not recommended for new designs, ...