DN2530

DN2530 N-Channel, Depletion-Mode, Vertical DMOS FET Features High-input impedance Low-input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Description The DN2530 is a low-threshold, depletion-mode, normally-on transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where high breakdown-voltage, high-input impedance, low-input capacitance, and fast switching speeds are desired. Package Types SOURCE DRAIN GATE TO-92 See Table 2-1 for pin information DRAIN SOURCE DRAIN GATE TO-243AA (SOT-89)  2016 Microchip Technology Inc. DS20005451A-page 1 DN2530 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS† Drain-to-source voltage ................................................................................................................