isc Silicon NPN Power Transistor
BUW11AW
DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variation...
isc Silicon
NPN Power
Transistor
BUW11AW
DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Converters ·Inverters ·Switching
regulators ·Motor control systems
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
4
A
100
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
BUW11AW
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
450
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2.5A; IB= 0.5A
VCE=RatedVCES ;VBE= 0 VCE=RatedVCES ;VBE= 0;TC=125℃
VEB= 9V; IC= 0
1.4
V
1 2
mA
10 mA
hFE-1
DC Current Gain
IC= 5mA ; VCE= 5V
10
35
hFE-2
DC Current Gain
IC= 0.5A ; VCE= 5V
10
35
NOTICE: I...