BUV61

isc Silicon NPN Power Transistor BUV61 DESCRIPTION ·High Current Capability ·Fully characterized at 125℃ ·Fast switching speed ·Motor control ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV VCEO Collector-Emitter Voltage (VBE= -1.5V) Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 300 V 200 V 7 V 50 A 75 A 8 A 15 A 250 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12.5A; IB= 0.625A IC= 12.5A; IB= 0.625A; Tj= 100℃ VCE (sat)-2 Collector-Emitter Saturation Voltage IC=25A; IB= 2.5A IC=25A; IB= 2.5A; Tj= 100℃ VCE (sat)-3 Collector-Emitter Saturation Voltage IC=4...