BUV46AFI

isc Silicon NPN Power Transistor BUV46AFI DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 30 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.12 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 2A; IB= 0.4A VCE= 1000V ; IB= 0 VEB= 7V; IC= 0 BUV46AFI MIN TYP. MAX UNIT 450 V 1.5 V 5.0 V 1.3 V 0.3 mA 1.0 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at a...