AXIAL LEADED SILICON RECTIFIER DIODES
10EDB60
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 600V CURRENT: 1.0 A
Features
! Miniature Size ! Low Forwar...
Description
10EDB60
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 600V CURRENT: 1.0 A
Features
! Miniature Size ! Low Forward Voltage drop ! Low Reverse Leakage Current ! High Surge Capability
Mechanical Data
! Case: D O - 4 1 ! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.35 grams (approx.) ! Mounting Position: Any ! Marking: Type Number
ABA
D
DO-41 Dim Min Max
A 25.40 ¾ B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 All Dimensions in mm
C
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Repetitive Peak Reverse Voltage
Average Rectified Output Current 50Hz Half Sine Wave Resistive Load
Ta=39 °C *1 Ta=26 °C *2
RMS Forward Current Surge Forward Current
50Hz Half Sine Wave,1cycle, Non-repetitive
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
VRRM IO
IF(RMS)
I FSM T jw T stg
10EDB60 600 1.0 0.9
1.57
45 - 40 to + 150 - 40 to + 150
Unit
V A
A
A °C °C
Characteristics Peak Reverse Current Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
I RM VFM
Rth(j-a)
Tj= 25 ° C, VRM= VRRM Tj= 25 °C, IFM = 1.0A
Junction to P.C. Board mounted*1
Ambient
Without Fin *2
*1: P.C. Board mounted (L=3mm, Print Land=5 x 5mm, Both Sides) *2: Without Fin or P.C. Board mounted
Min. Typ. Max. Unit
- - 10 µA
- - 1.0 V
-
-
110 140
°C/W
1 of 2
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INSTANTANEOUS FORWARD CURRENT (A)
AVERAGE FORWARD CURRENT (A)
10 5
2 1 0.5
0.2 0.1
0
FORWARD CURRENT VS. VOL...
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