10EDB10

10EDB10 AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 100V CURRENT: 1.0 A Features ! Miniature Size ! Low Forward Voltage drop ! Low Reverse Leakage Current ! High Surge Capability Mechanical Data ! Case: D O - 4 1 Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ABA D DO-41 Dim Min Max A 25.40 ¾ B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 All Dimensions in mm C Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Repetitive Peak Reverse Voltage Average Rectified Output Current 50Hz Half Sine Wave Resistive Load Ta=39 °C *1 Ta=26 °C *2 Symbol VRRM IO 10EDB10 100 1.0 0.9 RMS Forward Current Surge Forward Current 50Hz Half Sine Wave,1cycle, Non-repetitive Surge Forward Current IF(RMS) I FSM 1.57 45 Operating JunctionTemperature Range T jw - 40 to + 150 Storage Temperature Range T stg - 40 to + 150 Electrical Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol Conditions I RM VFM Rth(j-a) Tj= 25 ° C, VRM= VRRM Tj= 25 °C, IFM = 1.0A Junction to P.C. Board mounted*1 Ambient Without Fin *2 *1: P.C. Board mounted (L=3mm, Print Land=5 x 5mm, Both Sides) *2: Without Fin or P.C. Board mounted Min. - Typ. - Unit V A A A °C °C Max. 10 1.0 110 140 Unit µA V °C/W 1 of 2 www.sunmate.tw INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A)...