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AP70T03GH-HF Dataheets PDF



Part Number AP70T03GH-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP70T03GH-HF DatasheetAP70T03GH-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP70T03GH/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching ▼ RoHS Compliant G D S Description AP70T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package i.

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Advanced Power Electronics Corp. AP70T03GH/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching ▼ RoHS Compliant G D S Description AP70T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP70T03GJ) are available for low-profile applications. BVDSS RDS(ON) ID 30V 9mΩ 60A GD S TO-252(H) GD S TO-251(J) Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 30 V +20 V 60 A 43 A 195 A 53 W 0.36 W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 175 -55 to 175 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 2.8 62.5 110 Units ℃/W ℃/W ℃/W 1 201408266 AP70T03GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) Drain-Source Breakdown Voltage VGS=0V, ID=250uA Static Drain-Source On-Resistance2 VGS=10V, ID=33A 30 -- -V 9 mΩ VGS=4.5V, ID=20A - - 18 mΩ VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=33A Drain-Source Leakage Current VDS=24V, VGS=0V Drain-Source Leakage Current (Tj=125oC) VDS=24V ,VGS=0V Gate-Source Leakage VGS= +20V, VDS=0V Total Gate Charge ID=33A Gate-Source Charge VDS=20V Gate-Drain ("Miller") Charge VGS=4.5V Turn-on Delay Time VDS=15V Rise Time ID=33A Turn-off Delay Time RG=3.3Ω Fall Time VGS=10V Input Capacitance .VGS=0V Output Capacitance VDS=25V Reverse Transfer Capacitance f=1.0MHz 1 - 3V - 35 - S - - 10 uA - - 250 uA - - +100 nA - 17 27 nC - 5 - nC - 10 - nC - 8 - ns - 105 - ns - 22 - ns - 9 - ns - 1485 2400 pF - 245 - pF - 170 - pF Source-Drain Diode Symbol Parameter VSD Forward On Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions IS=33A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - 1.3 V - 27 - ns - 20 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 ID , Drain Current (A) AP70T03GH/J-HF 200 T C =25 o C 150 100 10V 8.0V 6.0V 50 V G =4.0V 0 0.0 1.5 3.0 4.5 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID , Drain Current (A) 120 T C =175 o C 90 10V 8.0V 6.0V 60 V G =4.0V 30 0 0.0 1.5 3.0 4.5 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 60 I D =20A T C =25 ℃ 40 2 I D =33A V G =10V 1.6 Normalized RDS(ON) . 1.2 20 0.8 RDS(ON) (mΩ) 0 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage 1000 0.4 -50 25 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 175 2.5 VGS(th) (V) 100 10 T j =175 o C T j =25 o C 2 1.5 IS(A) 11 0.1 0 0.5 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.5 0.5 -50 25 100 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 175 3 AP70T03GH/J-HF 12 I D =33A 9 V DS =16V V DS =20V V DS =24V 6 10000 1000 f=1.0MHz C iss C (pF) VGS , Gate to Source Voltage (V) 3 0 0 5 10 15 20 25 30 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics C oss C rss 100 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 8. Typical Capacitance Characteristics 1000 1 Duty factor = 0.5 Normalized Thermal Response (Rthjc) 100 10us 100us 10 1ms T C =25 o C Single Pulse 1 0.1 1 10ms 100ms 1s DC10 100 V DS , Drain-to-S.


AP70T03GJ-HF AP70T03GH-HF PESD3V3L5UK


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