Document
Advanced Power Electronics Corp.
AP70T03GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching ▼ RoHS Compliant
G
D S
Description
AP70T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP70T03GJ) are available for low-profile applications.
BVDSS RDS(ON) ID
30V 9mΩ 60A
GD S
TO-252(H)
GD S
TO-251(J)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
30 V +20 V 60 A 43 A 195 A 53 W 0.36 W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 175 -55 to 175
℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 2.8 62.5 110
Units ℃/W ℃/W ℃/W
1 201408266
AP70T03GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=33A
30 --
-V 9 mΩ
VGS=4.5V, ID=20A
- - 18 mΩ
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=33A
Drain-Source Leakage Current
VDS=24V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=24V ,VGS=0V
Gate-Source Leakage
VGS= +20V, VDS=0V
Total Gate Charge
ID=33A
Gate-Source Charge
VDS=20V
Gate-Drain ("Miller") Charge
VGS=4.5V
Turn-on Delay Time
VDS=15V
Rise Time
ID=33A
Turn-off Delay Time
RG=3.3Ω
Fall Time
VGS=10V
Input Capacitance
.VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
1 - 3V
- 35 -
S
- - 10 uA
- - 250 uA
- - +100 nA
- 17 27 nC
- 5 - nC
- 10 - nC
- 8 - ns
- 105 -
ns
- 22 - ns
- 9 - ns
- 1485 2400 pF
- 245 - pF
- 170 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge
Test Conditions IS=33A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units - - 1.3 V - 27 - ns - 20 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
ID , Drain Current (A)
AP70T03GH/J-HF
200
T C =25 o C
150
100
10V 8.0V
6.0V
50
V G =4.0V
0 0.0 1.5 3.0 4.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID , Drain Current (A)
120
T C =175 o C
90
10V 8.0V 6.0V
60
V G =4.0V
30
0 0.0 1.5 3.0 4.5
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
60
I D =20A T C =25 ℃
40
2
I D =33A V G =10V
1.6
Normalized RDS(ON)
. 1.2
20 0.8
RDS(ON) (mΩ)
0 2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
1000
0.4 -50 25 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
175
2.5
VGS(th) (V)
100
10 T j =175 o C
T j =25 o C
2 1.5
IS(A)
11
0.1 0 0.5 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
1.5
0.5 -50 25 100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
175
3
AP70T03GH/J-HF
12
I D =33A
9
V DS =16V V DS =20V V DS =24V
6
10000 1000
f=1.0MHz C iss
C (pF)
VGS , Gate to Source Voltage (V)
3
0 0 5 10 15 20 25 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
C oss C rss
100 1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
1 Duty factor = 0.5
Normalized Thermal Response (Rthjc)
100 10us
100us
10
1ms
T C =25 o C Single Pulse
1 0.1
1
10ms 100ms 1s DC10 100
V DS , Drain-to-S.