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STN6335

Stanson Technology
Part Number STN6335
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A DESCRIPTION STN6335 is the dual N-Channel enhancement mode power fi...
Datasheet PDF File STN6335 PDF File

STN6335
STN6335

Overview
STN6335 Dual N Channel Enhancement Mode MOSFET 0.
95A DESCRIPTION STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer circuits where high-side switching, low in-line power loss and resistance to transients are needed.
PIN CONFIGURATION SOT-363 / SC70-6L D1 G2 S2 35YW FEATURE � 20V/0.
95A, RDS(ON) = 380mΩ@VGS =4.
5V � 20V/0.
75A, RDS(ON) =450mΩ@VGS =2.
5V � 20V/0.
65A, RDS(ON) =800mΩ@VGS =1.
8...


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