STN4480
N Channel Enhancement Mode MOSFET
14.0A
DESCRIPTION
STN4480 is the N-Channel logic enhancement mode power field ...
STN4480
N Channel Enhancement Mode MOSFET
14.0A
DESCRIPTION
STN4480 is the N-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8
FEATURE
40V/14.0A, RDS(ON) = 13mΩ (Typ.) @VGS = 10V
40V/5.0A, RDS(ON) = 15mΩ @VGS = 4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design
PART MARKING
Y: Year Code A: week Code Q: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4480 2010. V1
STN4480
N Channel Enhancement Mode MOSFET
14.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
VGSS ID
IDM
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
40
±20 14.0 10.0 70
4.0 3.1 2.0 150
-55/150
59
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA...