STN3456
N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION The STN3456 is the N-Channel enhancement mode power field ef...
STN3456
N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION The STN3456 is the N-Channel enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION TSOP-6P
FEATURE
◆ 30V/6.0A, RDS(ON)=40mΩ@VGS=10V ◆ 30V/5.0A, RDS(ON)=50mΩ@VGS=4.5V
◆ Super high density cell design for extremely low
RDS(ON) ◆ Exceptional an-resistance and maximum DC
current capability ◆ TSOP-6P package design
Y: Year Code W: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
STN3456ST6RG
TSOP-6
56YW
※ Week Code Code : A ~ Z ; a ~ z ※ STN3456ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com
STN3456 2008. V1
STN3456
N Channel Enhancement Mode MOSFET
6.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted )
Parameter
Symbol
Typical
Drain-Source Voltage
VDSS
30
Gate-Source Voltage
VGSS
±20
Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃
Pulsed Drain Current
ID IDM
6.0 5.0 30
Continuous Source Current (Diode Conduction)
IS
1.7
Power Dissipation Operation Junction Temperature
...