STN3446

STN3446 N Channel Enhancement Mode MOSFET 5.3A DESCRIPTION The STN3446 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6P FEATURE ◆ 20V/5.3A, RDS(ON)=48mΩ@VGS=4.5V ◆ 20V/3.4A, RDS(ON)=65mΩ@VGS=2.5V ◆ 20V/2.8A, RDS(ON)=90mΩ@VGS=1.8V ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional an-resistance and maximum DC current capability ◆ TSOP-6P package design Y: Year Code W: Week Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN3446 2010. V1 STN3446 N Channel Enhancement Mode MOSFET 5.3A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V TA=25℃ Continuous Drain Current (TJ=150℃) TA=70℃ Pulsed Drain Current ID IDM 5.3 A 4.2 25 A Continuous Source Current (Diode Conduction) IS 1.7 A Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD TJ 2.0 1.3 150 W ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient ...