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STN2018

Stanson Technology
Part Number STN2018
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN2018 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN2018 is the N-Channel logic enhancement mode power fie...
Datasheet PDF File STN2018 PDF File

STN2018
STN2018

Overview
STN2018 N Channel Enhancement Mode MOSFET 10.
0A DESCRIPTION STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notbook computer power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8 FEATURE 20V/10A, RDS(ON) = 10mΩ @VGS = 4.
5V 20V/7A, RDS(ON) = 15mΩ @VGS = 2.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PA...


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