STP601 / STP601D
P Channel Enhancement Mode MOSFET
-30A
DESCRIPTION
STP601/STP601D is the P-Channel logic enhancement mo...
STP601 / STP601D
P Channel Enhancement Mode MOSFET
-30A
DESCRIPTION
STP601/STP601D is the P-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. The STP401 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
-60V/-20.0A, RDS(ON) = 20mΩ(typ.) @VGS = -10V
-60V/-20.0A, RDS(ON) = 27mΩ @VGS = -4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design
( STP601D ) PART MARKING
( STP610 )
Y: Year Code A: Week Code Q: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STP601 / STP601D 2010. V1
STP601 / STP601D
P Channel Enhancement Mode MOSFET
-30A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted)
Parameter Drain-Source Voltage
Symbo l
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=100℃
VGSS ID
IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation
TA=25℃
PD
Operation Junction Temperature
TJ
Storage Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
-60 ±20 -30.0 -22.0 -110 -30
60 150 -55/150 25
Unit ...