STP4435
P Channel Enhancement Mode MOSFET
-10A
DESCRIPTION
STP4435 is the P-Channel logic enhancement mode power field e...
STP4435
P Channel Enhancement Mode MOSFET
-10A
DESCRIPTION
STP4435 is the P-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, and other battery powered circuits.
PIN CONFIGURATION SOP-8
FEATURE
l -30V/-9.2A, RDS(ON) =-22mΩ (Typ.) @VGS =-10V
l -30V/-7.0A, RDS(ON) = 30mΩ @VGS = -4.5V
l Super high density cell design for extremely low RDS(ON)
l Exceptional on-resistance and maximum DC current capability
l SOP-8 package design
PART MARKING SOP-8
Y:Year Code A:Preduce Code B:Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4435 2007. V1
STP4435
P Channel Enhancement Mode MOSFET
-10A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
VGSS ID IDM IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
-30
±20 -10.0 -7.0
-50
-2.3 2.8 1.8 -55/150
-55/150
70
Unit V V A A A W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bent...