STC6614
N&P Pair Enhancement Mode MOSFET
7.0A / -5.0A
DESCRIPTION
The STC6614 is the N & P-Channel enhancement mode powe...
STC6614
N&P Pair Enhancement Mode MOSFET
7.0A / -5.0A
DESCRIPTION
The STC6614 is the N & P-Channel enhancement mode power field effect
transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION SOP-8
FEATURE
N-Channel 60V/7.0A, RDS(ON) = 35mΩ(Typ.) @VGS = 10V 60V/4.0A, RDS(ON) = 40mΩ @VGS = 4.5V
PART MARKING
P-Channel -60V/-5.0A, RDS(ON) = 60mΩ(Typ.) @VGS = -10V -60V/-3.0A, RDS(ON)= 80mΩ @VGS = -4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package
Y∶Year A∶Product Code Q︰Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6614 2010. V1
STC6614
N&P Pair Enhancement Mode MOSFET
7.0A / -5.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter Drain-Source Voltage
Symbol VDSS
Typical NP
60 -60
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
VGSS ID IDM IS PD TJ
±2...