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STC6602 Dataheets PDF



Part Number STC6602
Manufacturers Stanson Technology
Logo Stanson Technology
Description MOSFET
Datasheet STC6602 DatasheetSTC6602 Datasheet (PDF)

STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A DESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required. PIN CONFI.

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STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A DESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required. PIN CONFIGURATION TSOP-6 FEATURE D1 S1 D2 02YW G1 S2 G2 Y: Year A: Week Code ORDERING INFORMATION Part Number Package Part Marking STC6602ST6RG TSOP-6 02YW ※ Week Code Code : A ~ Z ; a ~ z ※ STC6602ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC6602 2007. V1 STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Symbol VDSS Typical NP 30 -30 Unit V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ ID IDM 2.8 -2.8 A 2.3 -2.1 10 -8 A Continuous Source Current (Diode Conduction) IS 1.25 -1.4 A Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD TJ 1.15 0.75 -55/150 W ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient T≦10sec Steady State RθJA 50 90 52 ℃/W 90 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC6602 2007. V1 STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V(BR)DSS VGS(th) IGSS VGS=0V,ID=250uA VGS=0V,ID=-250uA VDS=VGS,ID=250uA VDS=VGS,ID=-250uA VDS=0V,VGS=±20V N 30 p -30 N1 P1 N p V 3 -3 ±100 ±100 V nA Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-source On-Resistance RDS(on) Forward Transconductance Diode Forward Voltage Dynamic gfs VSD VDS=30V,VGS=0V VDS=-30V,VGS=0V VDS=30V,VGS=0V TJ=55℃ VDS=-30V,VGS=0V TJ=55℃ VDS≦5V,VGS=10V VDS≦-5V,VGS=-10V VGS=10V,ID=2.8A VGS=-10V,ID=-2.8A VGS=4.5V,ID=2.3A VGS=-4.5V,ID=-2.5A VDS=10V,ID=2.8A VDS=-10V,ID=-2.8A IS=1.25A,VGS=0V IS=-1.2A,VGS=0V N1 P -1 uA N 10 P -10 6A -6 0.043 0.060 0.088 0.105 Ω 0.056 0.080 0.118 0.135 4.6 S -4 0.8 1.2 V -0.8 -1.2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg N-Channel N VDS=15V,VGS=4.5V, P Qgs VDS=2.0A N P-channel P Qgd VDS=-15V,VGS=-4.5V, N VDS=-2.0A P 4.5 10 5.8 10 nC 0.8 0.8 1.0 1.5 Turn-On Time Turn-Off Time Td(on) tr Td(off) tf N-Channel VDD=15V, RL=10Ω, VGEN=10V, RG=3Ω P-Channel VDD=-15V, RL=15Ω, VGEN=-10V, RG=3Ω N P N P N P N P 8 20 9 20 nS 12 30 9 20 17 35 18 35 8 20 6 20 STANSON TECHNOLOGY 120 Bentley Square, Mount.


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