Document
STC6602
Dual N&P Channel Enhancement Mode MOSFET
2.8A/-2.8A
DESCRIPTION
The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION TSOP-6
FEATURE
D1 S1 D2
02YW
G1 S2 G2
Y: Year A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
STC6602ST6RG
TSOP-6
02YW
※ Week Code Code : A ~ Z ; a ~ z ※ STC6602ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com
STC6602 2007. V1
STC6602
Dual N&P Channel Enhancement Mode MOSFET
2.8A/-2.8A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter Drain-Source Voltage
Symbol VDSS
Typical NP
30 -30
Unit V
Gate-Source Voltage
VGSS
±20
±20
V
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
ID IDM
2.8
-2.8
A
2.3 -2.1 10 -8 A
Continuous Source Current (Diode Conduction)
IS
1.25
-1.4
A
Power Dissipation Operation Junction Temperature
TA=25℃ TA=70℃
PD TJ
1.15 0.75 -55/150
W ℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
T≦10sec Steady State
RθJA
50 90
52
℃/W 90
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com
STC6602 2007. V1
STC6602
Dual N&P Channel Enhancement Mode MOSFET
2.8A/-2.8A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS VGS(th)
IGSS
VGS=0V,ID=250uA VGS=0V,ID=-250uA VDS=VGS,ID=250uA VDS=VGS,ID=-250uA
VDS=0V,VGS=±20V
N 30 p -30 N1 P1 N p
V
3 -3
±100 ±100
V nA
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-source On-Resistance RDS(on)
Forward Transconductance Diode Forward Voltage Dynamic
gfs VSD
VDS=30V,VGS=0V VDS=-30V,VGS=0V VDS=30V,VGS=0V
TJ=55℃ VDS=-30V,VGS=0V
TJ=55℃ VDS≦5V,VGS=10V VDS≦-5V,VGS=-10V VGS=10V,ID=2.8A VGS=-10V,ID=-2.8A VGS=4.5V,ID=2.3A VGS=-4.5V,ID=-2.5A VDS=10V,ID=2.8A VDS=-10V,ID=-2.8A IS=1.25A,VGS=0V IS=-1.2A,VGS=0V
N1 P -1 uA N 10
P -10
6A -6
0.043 0.060 0.088 0.105 Ω 0.056 0.080 0.118 0.135
4.6 S -4 0.8 1.2 V -0.8 -1.2
Total Gate Charge
Gate-Source Charge Gate-Drain Charge
Qg N-Channel N
VDS=15V,VGS=4.5V,
P
Qgs VDS=2.0A
N
P-channel
P
Qgd
VDS=-15V,VGS=-4.5V,
N
VDS=-2.0A
P
4.5 10 5.8 10
nC 0.8 0.8 1.0 1.5
Turn-On Time Turn-Off Time
Td(on) tr
Td(off) tf
N-Channel VDD=15V, RL=10Ω, VGEN=10V, RG=3Ω
P-Channel VDD=-15V, RL=15Ω, VGEN=-10V, RG=3Ω
N P N P N P N P
8 20 9 20 nS 12 30 9 20 17 35 18 35 8 20 6 20
STANSON TECHNOLOGY 120 Bentley Square, Mount.