ST3414
N Channel Enhancement Mode MOSFET
4.0A
DESCRIPTION
ST3414 is the N-Channel logic enhancement mode power field e...
ST3414
N Channel Enhancement Mode MOSFET
4.0A
DESCRIPTION
ST3414 is the N-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L
3 D GS 12
1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L
FEATURE
z 20V/4.2A, RDS(ON) = 40mΩ ( Typ.) @VGS = 4.5V
z 20V/3.4A, RDS(ON) = 55 mΩ @VGS = 2.5V
z 20V/2.8A, RDS(ON) = 75 mΩ @VGS = 1.8V
z Super high density cell design for extremely low RDS(ON)
z Exceptional on-resistance and maximum DC current capability
z SOT-23-3L package design
3
14YA
12
Y: Year Code A: Week Code ORDERING INFORMATION
Part Number
Package
Part Marking
ST3414S23RG
SOT-23
14YA
※ Week Code : A ~ Z ; a ~ z ※ ST3414S23RG : S23 : SOT23-3L R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
ST3414 2006. V1
ST3414
N Channel Enhancement Mode MOSFET
4.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
VDSS VGSS
ID ...