N-Channel MOSFET
ICE7N60FP
N-Channel Enhancement Mode MOSFET
ID V(BR)DSS rDS(ON)
Qg
Product Summary
TA = 25°C ID = 250uA VGS = 10V VDS...
Description
ICE7N60FP
N-Channel Enhancement Mode MOSFET
ID V(BR)DSS rDS(ON)
Qg
Product Summary
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
7A 600V 0.52Ω 21nC
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Pin Description:
TO-220
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID ID, pulse
EAS IAR dv/dt
Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness
VGS
Ptot Tj, Tstg
Gate Source Voltage
Power Dissipation Operating and Storage Temperature Mounting Torque
7 21 170 3.5 50
±20 ±30
65
-55 to +150 60
A A mJ A V/ns
V
W °C Ncm
TC = 25°C TC = 25°C ID = 3.5A Limited by Tjmax VDS = 480V, ID = 7A, Tj = 125°C Static AC (f>Hz) TC = 25°C
M 3 & 3.5 screws
Max Min Typ Typ
D
S
Symbol Parameter
Values Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
- - 1.9
RthJA Thermal Resistance, Junction to Ambient
- - 68
Tsold Soldering Temperature, Wave Soldering Only Al- - - 260 lowed At Leads
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS VGS(th) IDSS
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
600 -
-
2.1 3 3.9
...
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